Electron beam tuning of carrier concentrations in oxide nanowires

Hyunjin Ji, Jaewan Choi, Youngseung Cho, In Sung Hwang, Sun Jung Kim, Jong Heun Lee, Siegmar Roth, Gyu-Tae Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In spite of the attractive electrical properties of metal oxide nanowires, it is difficult to tune their surface states, notably the ionic adsorbents and oxygen vacancies, both of which can cause instability, degradation, and the irreproducibility or unrepeatable changes of the electrical characteristics. In order to control the surface states of the nanowires, electron beams were locally irradiated onto the channels of metal oxide nanowire field effect transistors. This high energy electron beam irradiation changed the electrical properties of the individual metal oxide nanowires, due to the removal of the negative adsorbents (Ō2, Ō). The detachment of the ionic adsorbents changes the charge states of the nanowires, resulting in the enhancement of the electrical conductance in n-type nanowires (ZnO, SnO 2) and the degradation of the conductance in p-type nanowires (CuO). By investigating the changes in the electrical properties of nanowire devices in air or vacuum, with or without exposure to electron beams, the roles of the physisorbed water molecules or chemisorbed oxygen molecules can be independently understood. Unlike the electron beam irradiation, the vacuum enhanced the conductance of both n-type (ZnO, SnO2) and p-type (CuO) nanowires, due to the release of charges caused by the detachment of the polarized water molecules that were screening them from the surface of the nanowires, irrespective of the major carrier type. The electron beam irradiation technique has the potential to locally modulate the charge carriers in electronic nanowire devices, and the changes could be maintained with proper passivation for the long-term preservation of the device characteristics.

Original languageEnglish
Article number013705
JournalJournal of Applied Physics
Volume110
Issue number1
DOIs
Publication statusPublished - 2011 Jul 1

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nanowires
tuning
electron beams
oxides
adsorbents
metal oxides
electrical properties
detachment
irradiation
degradation
molecules
vacuum
oxygen
high energy electrons
water
passivity
charge carriers
screening
field effect transistors
augmentation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electron beam tuning of carrier concentrations in oxide nanowires. / Ji, Hyunjin; Choi, Jaewan; Cho, Youngseung; Hwang, In Sung; Kim, Sun Jung; Lee, Jong Heun; Roth, Siegmar; Kim, Gyu-Tae.

In: Journal of Applied Physics, Vol. 110, No. 1, 013705, 01.07.2011.

Research output: Contribution to journalArticle

Ji, Hyunjin ; Choi, Jaewan ; Cho, Youngseung ; Hwang, In Sung ; Kim, Sun Jung ; Lee, Jong Heun ; Roth, Siegmar ; Kim, Gyu-Tae. / Electron beam tuning of carrier concentrations in oxide nanowires. In: Journal of Applied Physics. 2011 ; Vol. 110, No. 1.
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