Silicon (Si) and boron monophosphide (BP) films were epitaxially grown on Si(100) substrate by alternating the thermal reaction of B//2H//6 and PH//3 in hydrogen with the thermal decomposition of SiH//4 in hydrogen. In BP(100) film epitaxially grown on Si(100), characteristic crystalline imperfections such as left brace 111 right brace twin defect pattern were observed by TEM. The twin patterns were found to be contained within 25nm thick and the BP film with a high crystalline perfection was obtained by removing the imperfect layer. In spite of the existence of defects in the early growth layer of BP, for the growth of Si film on BP, Moire differaction patterns and fringes from the Si-BP double epitaxial films were observed.
|Number of pages||5|
|Publication status||Published - 1987 Dec 1|
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