Abstract
It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface emitting cold cathode. 2.0 μm of an non-doped polysilicon layer is formed on an heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol = 1:1 under illumination by a 500 W tungsten lamp from a distance of 20 cm. The electron emission properties of the PPS diode were investigated as a function of anodizing condition such as anodizing current density. The electron emission trajectory was investigated, and it was also demonstrated their good uniformity in the emitting area.
Original language | English |
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Pages (from-to) | 233-235 |
Number of pages | 3 |
Journal | Current Applied Physics |
Volume | 2 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2002 |
Keywords
- Cold electron emitter
- Field emission display
- Field emitter
- Vacuum microelectronics
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)