Abstract
It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface emitting cold cathode. 2.0 μm of an non-doped polysilicon layer is formed on an heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol = 1:1 under illumination by a 500 W tungsten lamp from a distance of 20 cm. The electron emission properties of the PPS diode were investigated as a function of anodizing condition such as anodizing current density. The electron emission trajectory was investigated, and it was also demonstrated their good uniformity in the emitting area.
| Original language | English |
|---|---|
| Pages (from-to) | 233-235 |
| Number of pages | 3 |
| Journal | Current Applied Physics |
| Volume | 2 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2002 |
Keywords
- Cold electron emitter
- Field emission display
- Field emitter
- Vacuum microelectronics
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
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Cite this
Kim, H., Park, J. W., Lee, J. W., Lee, Y. H., Song, Y. H., Lee, J. H., Cho, K. I., Jang, J., Oh, M. H., & Ju, B. K. (2002). Electron emission characteristics of the porous polycrystalline silicon diode. Current Applied Physics, 2(3), 233-235. https://doi.org/10.1016/S1567-1739(02)00093-7