Electron emission characteristics of the porous polycrystalline silicon diode

Hoon Kim; Jong Won Park; Joo Won Lee; Yun Hi Lee; Yoon Ho Song; Jin Ho Lee; Kyung Ik Cho; Jin Jang; Myung Hwan Oh; Byeong Kwon Ju

doi:10.1016/S1567-1739(02)00093-7

Electron emission characteristics of the porous polycrystalline silicon diode

Hoon Kim, Jong Won Park, Joo Won Lee, Yun Hi Lee, Yoon Ho Song, Jin Ho Lee, Kyung Ik Cho, Jin Jang, Myung Hwan Oh, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface emitting cold cathode. 2.0 μm of an non-doped polysilicon layer is formed on an heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol = 1:1 under illumination by a 500 W tungsten lamp from a distance of 20 cm. The electron emission properties of the PPS diode were investigated as a function of anodizing condition such as anodizing current density. The electron emission trajectory was investigated, and it was also demonstrated their good uniformity in the emitting area.

Original language	English
Pages (from-to)	233-235
Number of pages	3
Journal	Current Applied Physics
Volume	2
Issue number	3
DOIs	https://doi.org/10.1016/S1567-1739(02)00093-7
Publication status	Published - 2002

Keywords

Cold electron emitter
Field emission display
Field emitter
Vacuum microelectronics

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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title = "Electron emission characteristics of the porous polycrystalline silicon diode",

abstract = "It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface emitting cold cathode. 2.0 μm of an non-doped polysilicon layer is formed on an heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol = 1:1 under illumination by a 500 W tungsten lamp from a distance of 20 cm. The electron emission properties of the PPS diode were investigated as a function of anodizing condition such as anodizing current density. The electron emission trajectory was investigated, and it was also demonstrated their good uniformity in the emitting area.",

keywords = "Cold electron emitter, Field emission display, Field emitter, Vacuum microelectronics",

author = "Hoon Kim and Park, {Jong Won} and Lee, {Joo Won} and Lee, {Yun Hi} and Song, {Yoon Ho} and Lee, {Jin Ho} and Cho, {Kyung Ik} and Jin Jang and Oh, {Myung Hwan} and Ju, {Byeong Kwon}",

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doi = "10.1016/S1567-1739(02)00093-7",

language = "English",

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pages = "233--235",

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issn = "1567-1739",

publisher = "Elsevier",

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T1 - Electron emission characteristics of the porous polycrystalline silicon diode

AU - Kim, Hoon

AU - Park, Jong Won

AU - Lee, Joo Won

AU - Lee, Yun Hi

AU - Song, Yoon Ho

AU - Lee, Jin Ho

AU - Cho, Kyung Ik

AU - Jang, Jin

AU - Oh, Myung Hwan

AU - Ju, Byeong Kwon

PY - 2002

Y1 - 2002

N2 - It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface emitting cold cathode. 2.0 μm of an non-doped polysilicon layer is formed on an heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol = 1:1 under illumination by a 500 W tungsten lamp from a distance of 20 cm. The electron emission properties of the PPS diode were investigated as a function of anodizing condition such as anodizing current density. The electron emission trajectory was investigated, and it was also demonstrated their good uniformity in the emitting area.

AB - It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface emitting cold cathode. 2.0 μm of an non-doped polysilicon layer is formed on an heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol = 1:1 under illumination by a 500 W tungsten lamp from a distance of 20 cm. The electron emission properties of the PPS diode were investigated as a function of anodizing condition such as anodizing current density. The electron emission trajectory was investigated, and it was also demonstrated their good uniformity in the emitting area.

KW - Cold electron emitter

KW - Field emission display

KW - Field emitter

KW - Vacuum microelectronics

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U2 - 10.1016/S1567-1739(02)00093-7

DO - 10.1016/S1567-1739(02)00093-7

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SP - 233

EP - 235

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 3

ER -

Electron emission characteristics of the porous polycrystalline silicon diode

Abstract

Keywords

ASJC Scopus subject areas

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