Electron emission characteristics of the porous polycrystalline silicon diode

Hoon Kim, Jong Won Park, Joo Won Lee, Yun-Hi Lee, Yoon Ho Song, Jin Ho Lee, Kyung Ik Cho, Jin Jang, Myung Hwan Oh, Byeong Kwon Ju

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface emitting cold cathode. 2.0 μm of an non-doped polysilicon layer is formed on an heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol = 1:1 under illumination by a 500 W tungsten lamp from a distance of 20 cm. The electron emission properties of the PPS diode were investigated as a function of anodizing condition such as anodizing current density. The electron emission trajectory was investigated, and it was also demonstrated their good uniformity in the emitting area.

Original languageEnglish
Pages (from-to)233-235
Number of pages3
JournalCurrent Applied Physics
Issue number3
Publication statusPublished - 2002


  • Cold electron emitter
  • Field emission display
  • Field emitter
  • Vacuum microelectronics

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)


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