Electron emission of vertically aligned carbon nanotubes grown on a large area silicon substrate by thermal chemical vapour deposition

Cheol Jin Lee, J. H. Park, K. H. Son, D. W. Kim, T. J. Lee, S. C. Lyu, S. Y. Kang, J. H. Lee, H. K. Park, C. J. Lee, J. H. You

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have grown vertically aligned carbon nanotubes on a large area of Co-Ni codeposited Si substrates by thermal chemical vapour deposition using C 2H 2 gas. The carbon nanotubes grown by the thermal chemical vapour deposition are multi-wall structure, and the wall surface of nanotubes is covered with defective graphite sheets or carbonaceous particles. The carbon nanotubes range from 50 to 120 nm in diameter and about 130 μm in length at 950 °C. Steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically. The turn-on voltage was about 0.8 V/μm with a current density of 0.1 μA/cm 2 and emission current reveals the Fowler-Nordheim mode.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsK.L. Jensen, R.J. Nemanich, P. Holloway, T. Trottier, W. Mackie
Volume621
Publication statusPublished - 2000
Externally publishedYes
EventElectron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays - San Francisco, CA, United States
Duration: 2000 Apr 252000 Apr 27

Other

OtherElectron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays
CountryUnited States
CitySan Francisco, CA
Period00/4/2500/4/27

Fingerprint

Carbon Nanotubes
Electron emission
Silicon
Nanotubes
Chemical vapor deposition
Carbon nanotubes
Substrates
Graphite
Current density
Gases
Electric potential
Hot Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, C. J., Park, J. H., Son, K. H., Kim, D. W., Lee, T. J., Lyu, S. C., ... You, J. H. (2000). Electron emission of vertically aligned carbon nanotubes grown on a large area silicon substrate by thermal chemical vapour deposition. In K. L. Jensen, R. J. Nemanich, P. Holloway, T. Trottier, & W. Mackie (Eds.), Materials Research Society Symposium - Proceedings (Vol. 621)

Electron emission of vertically aligned carbon nanotubes grown on a large area silicon substrate by thermal chemical vapour deposition. / Lee, Cheol Jin; Park, J. H.; Son, K. H.; Kim, D. W.; Lee, T. J.; Lyu, S. C.; Kang, S. Y.; Lee, J. H.; Park, H. K.; Lee, C. J.; You, J. H.

Materials Research Society Symposium - Proceedings. ed. / K.L. Jensen; R.J. Nemanich; P. Holloway; T. Trottier; W. Mackie. Vol. 621 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, CJ, Park, JH, Son, KH, Kim, DW, Lee, TJ, Lyu, SC, Kang, SY, Lee, JH, Park, HK, Lee, CJ & You, JH 2000, Electron emission of vertically aligned carbon nanotubes grown on a large area silicon substrate by thermal chemical vapour deposition. in KL Jensen, RJ Nemanich, P Holloway, T Trottier & W Mackie (eds), Materials Research Society Symposium - Proceedings. vol. 621, Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays, San Francisco, CA, United States, 00/4/25.
Lee CJ, Park JH, Son KH, Kim DW, Lee TJ, Lyu SC et al. Electron emission of vertically aligned carbon nanotubes grown on a large area silicon substrate by thermal chemical vapour deposition. In Jensen KL, Nemanich RJ, Holloway P, Trottier T, Mackie W, editors, Materials Research Society Symposium - Proceedings. Vol. 621. 2000
Lee, Cheol Jin ; Park, J. H. ; Son, K. H. ; Kim, D. W. ; Lee, T. J. ; Lyu, S. C. ; Kang, S. Y. ; Lee, J. H. ; Park, H. K. ; Lee, C. J. ; You, J. H. / Electron emission of vertically aligned carbon nanotubes grown on a large area silicon substrate by thermal chemical vapour deposition. Materials Research Society Symposium - Proceedings. editor / K.L. Jensen ; R.J. Nemanich ; P. Holloway ; T. Trottier ; W. Mackie. Vol. 621 2000.
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AB - We have grown vertically aligned carbon nanotubes on a large area of Co-Ni codeposited Si substrates by thermal chemical vapour deposition using C 2H 2 gas. The carbon nanotubes grown by the thermal chemical vapour deposition are multi-wall structure, and the wall surface of nanotubes is covered with defective graphite sheets or carbonaceous particles. The carbon nanotubes range from 50 to 120 nm in diameter and about 130 μm in length at 950 °C. Steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically. The turn-on voltage was about 0.8 V/μm with a current density of 0.1 μA/cm 2 and emission current reveals the Fowler-Nordheim mode.

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