Electron irradiation effects in GaNInGaN Multiple quantum well structures

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, In-Hwan Lee, Jong Hyeob Baek, N. G. Kolin, V. M. Boiko, D. I. Merkurisov, S. J. Pearton

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Capacitance-voltage profiles, admittance spectra, deep-level spectra, current-voltage characteristics, and microcathodoluminescence (MCL) spectra were measured before and after electron irradiation of n-GaNInGaN multi-quantum-well (MQW) structures typical of the active region of GaNInGaN blue light emitting diodes. Electron irradiation produces strong compensation of the conductivity in the MQW and introduces interface traps with ionization energies of 100 and 190 meV, in addition to a broad band of interface traps closer to the middle of the bandgap, acceptor traps near Ec -1.1 eV and hole traps near Ev +0.9 eV in the GaN barriers and at the GaNInGaN interfaces in the QWs. The dose of electrons at which measurable changes occur in the MCL spectra is 1015 cm-2, while measurable changes in the electrical properties are observed after doses exceeding 1016 cm-2 electrons.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume155
Issue number1
DOIs
Publication statusPublished - 2008 Jan 1
Externally publishedYes

Fingerprint

Electron irradiation
electron irradiation
Semiconductor quantum wells
traps
quantum wells
Hole traps
Electrons
Ionization potential
Current voltage characteristics
Light emitting diodes
Electric properties
Energy gap
Capacitance
dosage
Electric potential
electric potential
electrical impedance
electrons
light emitting diodes
capacitance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Lee, I-H., Baek, J. H., Kolin, N. G., ... Pearton, S. J. (2008). Electron irradiation effects in GaNInGaN Multiple quantum well structures. Journal of the Electrochemical Society, 155(1). https://doi.org/10.1149/1.2803517

Electron irradiation effects in GaNInGaN Multiple quantum well structures. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Lee, In-Hwan; Baek, Jong Hyeob; Kolin, N. G.; Boiko, V. M.; Merkurisov, D. I.; Pearton, S. J.

In: Journal of the Electrochemical Society, Vol. 155, No. 1, 01.01.2008.

Research output: Contribution to journalArticle

Polyakov, AY, Smirnov, NB, Govorkov, AV, Lee, I-H, Baek, JH, Kolin, NG, Boiko, VM, Merkurisov, DI & Pearton, SJ 2008, 'Electron irradiation effects in GaNInGaN Multiple quantum well structures', Journal of the Electrochemical Society, vol. 155, no. 1. https://doi.org/10.1149/1.2803517
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Lee, In-Hwan ; Baek, Jong Hyeob ; Kolin, N. G. ; Boiko, V. M. ; Merkurisov, D. I. ; Pearton, S. J. / Electron irradiation effects in GaNInGaN Multiple quantum well structures. In: Journal of the Electrochemical Society. 2008 ; Vol. 155, No. 1.
@article{3188c85168e24ba6962469968a24d56f,
title = "Electron irradiation effects in GaNInGaN Multiple quantum well structures",
abstract = "Capacitance-voltage profiles, admittance spectra, deep-level spectra, current-voltage characteristics, and microcathodoluminescence (MCL) spectra were measured before and after electron irradiation of n-GaNInGaN multi-quantum-well (MQW) structures typical of the active region of GaNInGaN blue light emitting diodes. Electron irradiation produces strong compensation of the conductivity in the MQW and introduces interface traps with ionization energies of 100 and 190 meV, in addition to a broad band of interface traps closer to the middle of the bandgap, acceptor traps near Ec -1.1 eV and hole traps near Ev +0.9 eV in the GaN barriers and at the GaNInGaN interfaces in the QWs. The dose of electrons at which measurable changes occur in the MCL spectra is 1015 cm-2, while measurable changes in the electrical properties are observed after doses exceeding 1016 cm-2 electrons.",
author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and In-Hwan Lee and Baek, {Jong Hyeob} and Kolin, {N. G.} and Boiko, {V. M.} and Merkurisov, {D. I.} and Pearton, {S. J.}",
year = "2008",
month = "1",
day = "1",
doi = "10.1149/1.2803517",
language = "English",
volume = "155",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "1",

}

TY - JOUR

T1 - Electron irradiation effects in GaNInGaN Multiple quantum well structures

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Lee, In-Hwan

AU - Baek, Jong Hyeob

AU - Kolin, N. G.

AU - Boiko, V. M.

AU - Merkurisov, D. I.

AU - Pearton, S. J.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - Capacitance-voltage profiles, admittance spectra, deep-level spectra, current-voltage characteristics, and microcathodoluminescence (MCL) spectra were measured before and after electron irradiation of n-GaNInGaN multi-quantum-well (MQW) structures typical of the active region of GaNInGaN blue light emitting diodes. Electron irradiation produces strong compensation of the conductivity in the MQW and introduces interface traps with ionization energies of 100 and 190 meV, in addition to a broad band of interface traps closer to the middle of the bandgap, acceptor traps near Ec -1.1 eV and hole traps near Ev +0.9 eV in the GaN barriers and at the GaNInGaN interfaces in the QWs. The dose of electrons at which measurable changes occur in the MCL spectra is 1015 cm-2, while measurable changes in the electrical properties are observed after doses exceeding 1016 cm-2 electrons.

AB - Capacitance-voltage profiles, admittance spectra, deep-level spectra, current-voltage characteristics, and microcathodoluminescence (MCL) spectra were measured before and after electron irradiation of n-GaNInGaN multi-quantum-well (MQW) structures typical of the active region of GaNInGaN blue light emitting diodes. Electron irradiation produces strong compensation of the conductivity in the MQW and introduces interface traps with ionization energies of 100 and 190 meV, in addition to a broad band of interface traps closer to the middle of the bandgap, acceptor traps near Ec -1.1 eV and hole traps near Ev +0.9 eV in the GaN barriers and at the GaNInGaN interfaces in the QWs. The dose of electrons at which measurable changes occur in the MCL spectra is 1015 cm-2, while measurable changes in the electrical properties are observed after doses exceeding 1016 cm-2 electrons.

UR - http://www.scopus.com/inward/record.url?scp=36448954718&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36448954718&partnerID=8YFLogxK

U2 - 10.1149/1.2803517

DO - 10.1149/1.2803517

M3 - Article

AN - SCOPUS:36448954718

VL - 155

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 1

ER -