Electron irradiation of near-UV GaN/InGaN light emitting diodes

In-Hwan Lee, Alexander Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, N. M. Shmidt, N. A. Tal'nishnih, E. I. Shabunina, Han Su Cho, Sung Min Hwang, R. A. Zinovyev, S. I. Didenko, P. B. Lagov, S. J. Pearton

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Irradiation with 6 MeV electrons of near-UV (peak wavelength 385–390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near Ec−0.8 and Ec−1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 × 1016 cm−2. The likely origin of the EL efficiency decrease is this increase in concentration of the Ec −0.8 eV and Ec −1 eV traps.

Original languageEnglish
Article number1700372
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume214
Issue number10
DOIs
Publication statusPublished - 2017 Oct 1

Fingerprint

Electron irradiation
Electroluminescence
electron irradiation
electroluminescence
Light emitting diodes
light emitting diodes
traps
Electron traps
Semiconductor quantum wells
fluence
electrons
quantum wells
Irradiation
Wavelength
irradiation
Electrons
causes
wavelengths

Keywords

  • defects
  • electroluminescence
  • electron irradiation
  • GaN
  • LED

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Lee, I-H., Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Shmidt, N. M., Tal'nishnih, N. A., ... Pearton, S. J. (2017). Electron irradiation of near-UV GaN/InGaN light emitting diodes. Physica Status Solidi (A) Applications and Materials Science, 214(10), [1700372]. https://doi.org/10.1002/pssa.201700372

Electron irradiation of near-UV GaN/InGaN light emitting diodes. / Lee, In-Hwan; Polyakov, Alexander Y.; Smirnov, N. B.; Shchemerov, I. V.; Shmidt, N. M.; Tal'nishnih, N. A.; Shabunina, E. I.; Cho, Han Su; Hwang, Sung Min; Zinovyev, R. A.; Didenko, S. I.; Lagov, P. B.; Pearton, S. J.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 214, No. 10, 1700372, 01.10.2017.

Research output: Contribution to journalArticle

Lee, I-H, Polyakov, AY, Smirnov, NB, Shchemerov, IV, Shmidt, NM, Tal'nishnih, NA, Shabunina, EI, Cho, HS, Hwang, SM, Zinovyev, RA, Didenko, SI, Lagov, PB & Pearton, SJ 2017, 'Electron irradiation of near-UV GaN/InGaN light emitting diodes', Physica Status Solidi (A) Applications and Materials Science, vol. 214, no. 10, 1700372. https://doi.org/10.1002/pssa.201700372
Lee, In-Hwan ; Polyakov, Alexander Y. ; Smirnov, N. B. ; Shchemerov, I. V. ; Shmidt, N. M. ; Tal'nishnih, N. A. ; Shabunina, E. I. ; Cho, Han Su ; Hwang, Sung Min ; Zinovyev, R. A. ; Didenko, S. I. ; Lagov, P. B. ; Pearton, S. J. / Electron irradiation of near-UV GaN/InGaN light emitting diodes. In: Physica Status Solidi (A) Applications and Materials Science. 2017 ; Vol. 214, No. 10.
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AU - Smirnov, N. B.

AU - Shchemerov, I. V.

AU - Shmidt, N. M.

AU - Tal'nishnih, N. A.

AU - Shabunina, E. I.

AU - Cho, Han Su

AU - Hwang, Sung Min

AU - Zinovyev, R. A.

AU - Didenko, S. I.

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AB - Irradiation with 6 MeV electrons of near-UV (peak wavelength 385–390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near Ec−0.8 and Ec−1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 × 1016 cm−2. The likely origin of the EL efficiency decrease is this increase in concentration of the Ec −0.8 eV and Ec −1 eV traps.

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