Electron magnetic resonance study of a YMnO 3/Si ferroelectric gate structure

Chang Hoon Lee, AiRan Han, Joon Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have performed systematic X-band electron magnetic resonance(EMR) measurements for a YMnO 3/Si ferroelectric gate structure prepared by sputtering in an O 2/(Ar + O 2) atmosphere of 20%. The EMR, intensities observed at room temperature consist of two parts: one is a derivative type of Gaussian EMR line with a ΔH fwhm of 524 G at g ∼ 2, and the other is a sharp composite spectrum with a very complex structure which is modulated in the former Gaussian EMR, line. In particular, the EMR, temperature behavior of the broad Gaussian showed a motional narrowing with increasing temperature. These results suggest that the Mn clusters in the polycrystalline Y 2O 3 layer and/or the amorphous Si-enriched Y-Si interface layer are responsible for the EMR transitions observed.

Original languageEnglish
Pages (from-to)1123-1126
Number of pages4
JournalJournal of the Korean Physical Society
Volume45
Issue number4
Publication statusPublished - 2004 Oct 1

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magnetic resonance
electrons
resonance lines
superhigh frequencies
sputtering
atmospheres
composite materials
temperature
room temperature

Keywords

  • Electron magnetic resonance
  • Interface Mn clusters
  • YMnOs/Si

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electron magnetic resonance study of a YMnO 3/Si ferroelectric gate structure. / Lee, Chang Hoon; Han, AiRan; Kim, Joon.

In: Journal of the Korean Physical Society, Vol. 45, No. 4, 01.10.2004, p. 1123-1126.

Research output: Contribution to journalArticle

@article{410de1b139004751bb93125d29dbe70e,
title = "Electron magnetic resonance study of a YMnO 3/Si ferroelectric gate structure",
abstract = "We have performed systematic X-band electron magnetic resonance(EMR) measurements for a YMnO 3/Si ferroelectric gate structure prepared by sputtering in an O 2/(Ar + O 2) atmosphere of 20{\%}. The EMR, intensities observed at room temperature consist of two parts: one is a derivative type of Gaussian EMR line with a ΔH fwhm of 524 G at g ∼ 2, and the other is a sharp composite spectrum with a very complex structure which is modulated in the former Gaussian EMR, line. In particular, the EMR, temperature behavior of the broad Gaussian showed a motional narrowing with increasing temperature. These results suggest that the Mn clusters in the polycrystalline Y 2O 3 layer and/or the amorphous Si-enriched Y-Si interface layer are responsible for the EMR transitions observed.",
keywords = "Electron magnetic resonance, Interface Mn clusters, YMnOs/Si",
author = "Lee, {Chang Hoon} and AiRan Han and Joon Kim",
year = "2004",
month = "10",
day = "1",
language = "English",
volume = "45",
pages = "1123--1126",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "4",

}

TY - JOUR

T1 - Electron magnetic resonance study of a YMnO 3/Si ferroelectric gate structure

AU - Lee, Chang Hoon

AU - Han, AiRan

AU - Kim, Joon

PY - 2004/10/1

Y1 - 2004/10/1

N2 - We have performed systematic X-band electron magnetic resonance(EMR) measurements for a YMnO 3/Si ferroelectric gate structure prepared by sputtering in an O 2/(Ar + O 2) atmosphere of 20%. The EMR, intensities observed at room temperature consist of two parts: one is a derivative type of Gaussian EMR line with a ΔH fwhm of 524 G at g ∼ 2, and the other is a sharp composite spectrum with a very complex structure which is modulated in the former Gaussian EMR, line. In particular, the EMR, temperature behavior of the broad Gaussian showed a motional narrowing with increasing temperature. These results suggest that the Mn clusters in the polycrystalline Y 2O 3 layer and/or the amorphous Si-enriched Y-Si interface layer are responsible for the EMR transitions observed.

AB - We have performed systematic X-band electron magnetic resonance(EMR) measurements for a YMnO 3/Si ferroelectric gate structure prepared by sputtering in an O 2/(Ar + O 2) atmosphere of 20%. The EMR, intensities observed at room temperature consist of two parts: one is a derivative type of Gaussian EMR line with a ΔH fwhm of 524 G at g ∼ 2, and the other is a sharp composite spectrum with a very complex structure which is modulated in the former Gaussian EMR, line. In particular, the EMR, temperature behavior of the broad Gaussian showed a motional narrowing with increasing temperature. These results suggest that the Mn clusters in the polycrystalline Y 2O 3 layer and/or the amorphous Si-enriched Y-Si interface layer are responsible for the EMR transitions observed.

KW - Electron magnetic resonance

KW - Interface Mn clusters

KW - YMnOs/Si

UR - http://www.scopus.com/inward/record.url?scp=8644278184&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=8644278184&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:8644278184

VL - 45

SP - 1123

EP - 1126

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 4

ER -