TY - JOUR
T1 - Electron mobility in poly(3-hexylthiophene) enhanced by gamma-ray irradiation
AU - Kim, M. S.
AU - Han, J. H.
AU - Lee, Cheol Eui
N1 - Funding Information:
This work was supported by the National Research Foundation of Korea (Proton Users Program Project No. 2014M2B2A4030835, 2014028954, and NRF-2010-0027963). The measurements at the Korean Basic Science Institute (KBSI) are acknowledged.
Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
PY - 2015/2
Y1 - 2015/2
N2 - Gamma-ray irradiation effects on the photoresponsive thin-film devices based on the regioregular poly(3-hexylthiophene) (RR-P3HT) conjugated polymer have been studied by means of atomic force microscopy, UV-vis absorption, photoluminescence (PL), and time-of-flight measurements. As a result, increased light absorption in the red region and PL quenching induced by the irradiation were observed. Besides, enhancement of the electron/hole mobilities, attributable to improved ordering or increased nanodomain size of the P3HT thin films, was revealed.
AB - Gamma-ray irradiation effects on the photoresponsive thin-film devices based on the regioregular poly(3-hexylthiophene) (RR-P3HT) conjugated polymer have been studied by means of atomic force microscopy, UV-vis absorption, photoluminescence (PL), and time-of-flight measurements. As a result, increased light absorption in the red region and PL quenching induced by the irradiation were observed. Besides, enhancement of the electron/hole mobilities, attributable to improved ordering or increased nanodomain size of the P3HT thin films, was revealed.
KW - Electron and hole mobility
KW - Gamma-ray irradiation effects
KW - Regioregular P3HT conjugated polymer
UR - http://www.scopus.com/inward/record.url?scp=84912529055&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2014.09.022
DO - 10.1016/j.cap.2014.09.022
M3 - Article
AN - SCOPUS:84912529055
VL - 15
SP - 25
EP - 28
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 1
ER -