Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode

Jun Ho Kim; Sung Nam Kwon; Seok In Na; Sun Kyung Kim; Young Zo Yoo; Hyeong Seop Im; Tae Yeon Seong

doi:10.1007/s11664-016-5147-4

Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode

Jun Ho Kim, Sung Nam Kwon, Seok In Na, Sun Kyung Kim, Young Zo Yoo, Hyeong Seop Im, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Inverted organic solar cells (OSCs) have been fabricated with conventional Sn-doped indium oxide (ITO) and amorphous indium gallium zinc oxide (a-IGZO)/Ag/a-IGZO (39 nm/19 nm/39 nm) (a-IAI) electrodes and their electrical characteristics characterized. The ITO and optimized a-IAI electrodes showed high transmittance of 96% and 88% at 500 nm, respectively. The carrier concentration and sheet resistance of the ITO and a-IAI films were 8.46 × 10²⁰ cm⁻³ and 7.96 × 10²¹ cm⁻³ and 14.18 Ω/sq and 4.24 Ω/sq, respectively. Electron transport layer (ETL)-free OSCs with the a-IAI electrode exhibited power conversion efficiency (PCE) of 2.66%, similar to that of ZnO ETL-based OSCs with ITO electrode (3.27%). However, the ETL-free OSCs with the a-IAI electrode showed much higher PCE than the ETL-free OSCs with the ITO electrode (0.84%). Ultraviolet photoelectron spectroscopy results showed that the work function of the a-IAI electrode was 4.15 eV. This improved performance was attributed to the various roles of the a-IAI electrode, e.g., as an effective ETL and a hole blocking layer.

Original language	English
Pages (from-to)	2140-2146
Number of pages	7
Journal	Journal of Electronic Materials
Volume	46
Issue number	4
DOIs	https://doi.org/10.1007/s11664-016-5147-4
Publication status	Published - 2017 Apr 1

Keywords

Ag
Indium gallium zinc oxide
multilayer
organic solar cell
transparent conducting electrode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-016-5147-4

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Kim, J. H., Kwon, S. N., Na, S. I., Kim, S. K., Yoo, Y. Z., Im, H. S., & Seong, T. Y. (2017). Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode. Journal of Electronic Materials, 46(4), 2140-2146. https://doi.org/10.1007/s11664-016-5147-4

Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode. / Kim, Jun Ho; Kwon, Sung Nam; Na, Seok In et al.

In: Journal of Electronic Materials, Vol. 46, No. 4, 01.04.2017, p. 2140-2146.

Research output: Contribution to journal › Article › peer-review

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title = "Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode",

abstract = "Inverted organic solar cells (OSCs) have been fabricated with conventional Sn-doped indium oxide (ITO) and amorphous indium gallium zinc oxide (a-IGZO)/Ag/a-IGZO (39 nm/19 nm/39 nm) (a-IAI) electrodes and their electrical characteristics characterized. The ITO and optimized a-IAI electrodes showed high transmittance of 96% and 88% at 500 nm, respectively. The carrier concentration and sheet resistance of the ITO and a-IAI films were 8.46 × 1020 cm−3 and 7.96 × 1021 cm−3 and 14.18 Ω/sq and 4.24 Ω/sq, respectively. Electron transport layer (ETL)-free OSCs with the a-IAI electrode exhibited power conversion efficiency (PCE) of 2.66%, similar to that of ZnO ETL-based OSCs with ITO electrode (3.27%). However, the ETL-free OSCs with the a-IAI electrode showed much higher PCE than the ETL-free OSCs with the ITO electrode (0.84%). Ultraviolet photoelectron spectroscopy results showed that the work function of the a-IAI electrode was 4.15 eV. This improved performance was attributed to the various roles of the a-IAI electrode, e.g., as an effective ETL and a hole blocking layer.",

keywords = "Ag, Indium gallium zinc oxide, multilayer, organic solar cell, transparent conducting electrode",

author = "Kim, {Jun Ho} and Kwon, {Sung Nam} and Na, {Seok In} and Kim, {Sun Kyung} and Yoo, {Young Zo} and Im, {Hyeong Seop} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the Korea Evaluation Institute of Industrial Technology (Grant No. 10049601) and the World Class 300 Project (Grant No. S2317456) through the Korea Institute for Advancement of Technology (KIAT), which is funded by the Small and Medium Business Administration. Publisher Copyright: {\textcopyright} 2016, The Minerals, Metals & Materials Society.",

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AU - Kim, Jun Ho

AU - Kwon, Sung Nam

AU - Na, Seok In

AU - Kim, Sun Kyung

AU - Yoo, Young Zo

AU - Im, Hyeong Seop

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the Korea Evaluation Institute of Industrial Technology (Grant No. 10049601) and the World Class 300 Project (Grant No. S2317456) through the Korea Institute for Advancement of Technology (KIAT), which is funded by the Small and Medium Business Administration. Publisher Copyright: © 2016, The Minerals, Metals & Materials Society.

PY - 2017/4/1

Y1 - 2017/4/1

N2 - Inverted organic solar cells (OSCs) have been fabricated with conventional Sn-doped indium oxide (ITO) and amorphous indium gallium zinc oxide (a-IGZO)/Ag/a-IGZO (39 nm/19 nm/39 nm) (a-IAI) electrodes and their electrical characteristics characterized. The ITO and optimized a-IAI electrodes showed high transmittance of 96% and 88% at 500 nm, respectively. The carrier concentration and sheet resistance of the ITO and a-IAI films were 8.46 × 1020 cm−3 and 7.96 × 1021 cm−3 and 14.18 Ω/sq and 4.24 Ω/sq, respectively. Electron transport layer (ETL)-free OSCs with the a-IAI electrode exhibited power conversion efficiency (PCE) of 2.66%, similar to that of ZnO ETL-based OSCs with ITO electrode (3.27%). However, the ETL-free OSCs with the a-IAI electrode showed much higher PCE than the ETL-free OSCs with the ITO electrode (0.84%). Ultraviolet photoelectron spectroscopy results showed that the work function of the a-IAI electrode was 4.15 eV. This improved performance was attributed to the various roles of the a-IAI electrode, e.g., as an effective ETL and a hole blocking layer.

AB - Inverted organic solar cells (OSCs) have been fabricated with conventional Sn-doped indium oxide (ITO) and amorphous indium gallium zinc oxide (a-IGZO)/Ag/a-IGZO (39 nm/19 nm/39 nm) (a-IAI) electrodes and their electrical characteristics characterized. The ITO and optimized a-IAI electrodes showed high transmittance of 96% and 88% at 500 nm, respectively. The carrier concentration and sheet resistance of the ITO and a-IAI films were 8.46 × 1020 cm−3 and 7.96 × 1021 cm−3 and 14.18 Ω/sq and 4.24 Ω/sq, respectively. Electron transport layer (ETL)-free OSCs with the a-IAI electrode exhibited power conversion efficiency (PCE) of 2.66%, similar to that of ZnO ETL-based OSCs with ITO electrode (3.27%). However, the ETL-free OSCs with the a-IAI electrode showed much higher PCE than the ETL-free OSCs with the ITO electrode (0.84%). Ultraviolet photoelectron spectroscopy results showed that the work function of the a-IAI electrode was 4.15 eV. This improved performance was attributed to the various roles of the a-IAI electrode, e.g., as an effective ETL and a hole blocking layer.

KW - Ag

KW - Indium gallium zinc oxide

KW - multilayer

KW - organic solar cell

KW - transparent conducting electrode

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SN - 0361-5235

VL - 46

SP - 2140

EP - 2146

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode

Abstract

Keywords

ASJC Scopus subject areas

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