Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode

Jun Ho Kim, Sung Nam Kwon, Seok In Na, Sun Kyung Kim, Young Zo Yoo, Hyeong Seop Im, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Inverted organic solar cells (OSCs) have been fabricated with conventional Sn-doped indium oxide (ITO) and amorphous indium gallium zinc oxide (a-IGZO)/Ag/a-IGZO (39 nm/19 nm/39 nm) (a-IAI) electrodes and their electrical characteristics characterized. The ITO and optimized a-IAI electrodes showed high transmittance of 96% and 88% at 500 nm, respectively. The carrier concentration and sheet resistance of the ITO and a-IAI films were 8.46 × 1020 cm−3 and 7.96 × 1021 cm−3 and 14.18 Ω/sq and 4.24 Ω/sq, respectively. Electron transport layer (ETL)-free OSCs with the a-IAI electrode exhibited power conversion efficiency (PCE) of 2.66%, similar to that of ZnO ETL-based OSCs with ITO electrode (3.27%). However, the ETL-free OSCs with the a-IAI electrode showed much higher PCE than the ETL-free OSCs with the ITO electrode (0.84%). Ultraviolet photoelectron spectroscopy results showed that the work function of the a-IAI electrode was 4.15 eV. This improved performance was attributed to the various roles of the a-IAI electrode, e.g., as an effective ETL and a hole blocking layer.

Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalJournal of Electronic Materials
DOIs
Publication statusAccepted/In press - 2016 Nov 30

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
low resistance
Zinc oxide
zinc oxides
indium
Multilayers
solar cells
ITO (semiconductors)
Electrodes
electrodes
electrons
Conversion efficiency
Ultraviolet photoelectron spectroscopy
Electron Transport
Organic solar cells
Sheet resistance
ultraviolet spectroscopy

Keywords

  • Ag
  • Indium gallium zinc oxide
  • multilayer
  • organic solar cell
  • transparent conducting electrode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode. / Kim, Jun Ho; Kwon, Sung Nam; Na, Seok In; Kim, Sun Kyung; Yoo, Young Zo; Im, Hyeong Seop; Seong, Tae Yeon.

In: Journal of Electronic Materials, 30.11.2016, p. 1-7.

Research output: Contribution to journalArticle

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abstract = "Inverted organic solar cells (OSCs) have been fabricated with conventional Sn-doped indium oxide (ITO) and amorphous indium gallium zinc oxide (a-IGZO)/Ag/a-IGZO (39 nm/19 nm/39 nm) (a-IAI) electrodes and their electrical characteristics characterized. The ITO and optimized a-IAI electrodes showed high transmittance of 96{\%} and 88{\%} at 500 nm, respectively. The carrier concentration and sheet resistance of the ITO and a-IAI films were 8.46 × 1020 cm−3 and 7.96 × 1021 cm−3 and 14.18 Ω/sq and 4.24 Ω/sq, respectively. Electron transport layer (ETL)-free OSCs with the a-IAI electrode exhibited power conversion efficiency (PCE) of 2.66{\%}, similar to that of ZnO ETL-based OSCs with ITO electrode (3.27{\%}). However, the ETL-free OSCs with the a-IAI electrode showed much higher PCE than the ETL-free OSCs with the ITO electrode (0.84{\%}). Ultraviolet photoelectron spectroscopy results showed that the work function of the a-IAI electrode was 4.15 eV. This improved performance was attributed to the various roles of the a-IAI electrode, e.g., as an effective ETL and a hole blocking layer.",
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AU - Na, Seok In

AU - Kim, Sun Kyung

AU - Yoo, Young Zo

AU - Im, Hyeong Seop

AU - Seong, Tae Yeon

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AB - Inverted organic solar cells (OSCs) have been fabricated with conventional Sn-doped indium oxide (ITO) and amorphous indium gallium zinc oxide (a-IGZO)/Ag/a-IGZO (39 nm/19 nm/39 nm) (a-IAI) electrodes and their electrical characteristics characterized. The ITO and optimized a-IAI electrodes showed high transmittance of 96% and 88% at 500 nm, respectively. The carrier concentration and sheet resistance of the ITO and a-IAI films were 8.46 × 1020 cm−3 and 7.96 × 1021 cm−3 and 14.18 Ω/sq and 4.24 Ω/sq, respectively. Electron transport layer (ETL)-free OSCs with the a-IAI electrode exhibited power conversion efficiency (PCE) of 2.66%, similar to that of ZnO ETL-based OSCs with ITO electrode (3.27%). However, the ETL-free OSCs with the a-IAI electrode showed much higher PCE than the ETL-free OSCs with the ITO electrode (0.84%). Ultraviolet photoelectron spectroscopy results showed that the work function of the a-IAI electrode was 4.15 eV. This improved performance was attributed to the various roles of the a-IAI electrode, e.g., as an effective ETL and a hole blocking layer.

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