Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

In-Hwan Lee, Alexander Y. Polyakov, Nikolai B. Smirnov, Eugene B. Yakimov, Sergey A. Tarelkin, Andery V. Turutin, Ivan V. Shemerov, Stephen J. Pearton

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Abstract

For a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) using both straight MOCVD and epitaxial lateral overgrowth techniques (ELOG proper or pendeo overgrowth), the spectra of deep traps were measured by deep-level transient spectroscopy (DLTS) with electrical or optical injection (ODLTS). The results were compared with diffusion length measurement results obtained from electronbeam- induced current experiments. The results strongly indicate that deep electron traps near E c - 0.56 eV could be the major recombination centers determining the diffusion length values in pendeo samples.

Original languageEnglish
Article number061002
JournalApplied Physics Express
Volume9
Issue number6
DOIs
Publication statusPublished - 2016 Jun 1
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, I-H., Polyakov, A. Y., Smirnov, N. B., Yakimov, E. B., Tarelkin, S. A., Turutin, A. V., ... Pearton, S. J. (2016). Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition. Applied Physics Express, 9(6), [061002]. https://doi.org/10.7567/APEX.9.061002