Electronic phase coherence and relaxation in graphene field effect transistor

Youngman Oh, Jonghwa Eom, Hyun Cheol Koo, Suk Hee Han

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Using the low-field magnetoresistance measurement we have studied the electronic phase coherence of the graphene field effect transistor for different carrier types and densities. The characteristic time scales such as phase coherence time (τφ), intervalley scattering time (τi), and momentum relaxation time have been deduced by weak localization fit to the magnetoresistance. We found that the magnitude of τφ shows similar magnitudes for both types of charge carriers. In the lower density regime including the Dirac point, τφ increases rapidly as the density of carrier increases. However, τi shows a weak dependence of carrier type and density. The momentum relaxation time becomes saturated below 3 K regardless of carrier type and density, which is in contrast to the temperature dependence of τφ.

Original languageEnglish
Pages (from-to)1987-1990
Number of pages4
JournalSolid State Communications
Volume150
Issue number41-42
DOIs
Publication statusPublished - 2010 Nov 1
Externally publishedYes

Fingerprint

phase coherence
Graphite
Magnetoresistance
Field effect transistors
Relaxation time
Graphene
Momentum
graphene
field effect transistors
Charge carriers
electronics
Scattering
relaxation time
momentum
charge carriers
Temperature
temperature dependence
scattering

Keywords

  • A. Graphene
  • D. Phase coherence
  • D. Weak localization
  • E. Magnetoresistance

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Chemistry

Cite this

Electronic phase coherence and relaxation in graphene field effect transistor. / Oh, Youngman; Eom, Jonghwa; Koo, Hyun Cheol; Han, Suk Hee.

In: Solid State Communications, Vol. 150, No. 41-42, 01.11.2010, p. 1987-1990.

Research output: Contribution to journalArticle

Oh, Youngman ; Eom, Jonghwa ; Koo, Hyun Cheol ; Han, Suk Hee. / Electronic phase coherence and relaxation in graphene field effect transistor. In: Solid State Communications. 2010 ; Vol. 150, No. 41-42. pp. 1987-1990.
@article{507b66858d7e491dad9f3d6ee839117a,
title = "Electronic phase coherence and relaxation in graphene field effect transistor",
abstract = "Using the low-field magnetoresistance measurement we have studied the electronic phase coherence of the graphene field effect transistor for different carrier types and densities. The characteristic time scales such as phase coherence time (τφ), intervalley scattering time (τi), and momentum relaxation time have been deduced by weak localization fit to the magnetoresistance. We found that the magnitude of τφ shows similar magnitudes for both types of charge carriers. In the lower density regime including the Dirac point, τφ increases rapidly as the density of carrier increases. However, τi shows a weak dependence of carrier type and density. The momentum relaxation time becomes saturated below 3 K regardless of carrier type and density, which is in contrast to the temperature dependence of τφ.",
keywords = "A. Graphene, D. Phase coherence, D. Weak localization, E. Magnetoresistance",
author = "Youngman Oh and Jonghwa Eom and Koo, {Hyun Cheol} and Han, {Suk Hee}",
year = "2010",
month = "11",
day = "1",
doi = "10.1016/j.ssc.2010.08.020",
language = "English",
volume = "150",
pages = "1987--1990",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "41-42",

}

TY - JOUR

T1 - Electronic phase coherence and relaxation in graphene field effect transistor

AU - Oh, Youngman

AU - Eom, Jonghwa

AU - Koo, Hyun Cheol

AU - Han, Suk Hee

PY - 2010/11/1

Y1 - 2010/11/1

N2 - Using the low-field magnetoresistance measurement we have studied the electronic phase coherence of the graphene field effect transistor for different carrier types and densities. The characteristic time scales such as phase coherence time (τφ), intervalley scattering time (τi), and momentum relaxation time have been deduced by weak localization fit to the magnetoresistance. We found that the magnitude of τφ shows similar magnitudes for both types of charge carriers. In the lower density regime including the Dirac point, τφ increases rapidly as the density of carrier increases. However, τi shows a weak dependence of carrier type and density. The momentum relaxation time becomes saturated below 3 K regardless of carrier type and density, which is in contrast to the temperature dependence of τφ.

AB - Using the low-field magnetoresistance measurement we have studied the electronic phase coherence of the graphene field effect transistor for different carrier types and densities. The characteristic time scales such as phase coherence time (τφ), intervalley scattering time (τi), and momentum relaxation time have been deduced by weak localization fit to the magnetoresistance. We found that the magnitude of τφ shows similar magnitudes for both types of charge carriers. In the lower density regime including the Dirac point, τφ increases rapidly as the density of carrier increases. However, τi shows a weak dependence of carrier type and density. The momentum relaxation time becomes saturated below 3 K regardless of carrier type and density, which is in contrast to the temperature dependence of τφ.

KW - A. Graphene

KW - D. Phase coherence

KW - D. Weak localization

KW - E. Magnetoresistance

UR - http://www.scopus.com/inward/record.url?scp=77957265707&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957265707&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2010.08.020

DO - 10.1016/j.ssc.2010.08.020

M3 - Article

VL - 150

SP - 1987

EP - 1990

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 41-42

ER -