Abstract
Using the low-field magnetoresistance measurement we have studied the electronic phase coherence of the graphene field effect transistor for different carrier types and densities. The characteristic time scales such as phase coherence time (τφ), intervalley scattering time (τi), and momentum relaxation time have been deduced by weak localization fit to the magnetoresistance. We found that the magnitude of τφ shows similar magnitudes for both types of charge carriers. In the lower density regime including the Dirac point, τφ increases rapidly as the density of carrier increases. However, τi shows a weak dependence of carrier type and density. The momentum relaxation time becomes saturated below 3 K regardless of carrier type and density, which is in contrast to the temperature dependence of τφ.
| Original language | English |
|---|---|
| Pages (from-to) | 1987-1990 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 150 |
| Issue number | 41-42 |
| DOIs | |
| Publication status | Published - 2010 Nov 1 |
| Externally published | Yes |
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Keywords
- A. Graphene
- D. Phase coherence
- D. Weak localization
- E. Magnetoresistance
ASJC Scopus subject areas
- Condensed Matter Physics
- Chemistry(all)
- Materials Chemistry
Cite this
Electronic phase coherence and relaxation in graphene field effect transistor. / Oh, Youngman; Eom, Jonghwa; Koo, Hyun Cheol; Han, Suk Hee.
In: Solid State Communications, Vol. 150, No. 41-42, 01.11.2010, p. 1987-1990.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electronic phase coherence and relaxation in graphene field effect transistor
AU - Oh, Youngman
AU - Eom, Jonghwa
AU - Koo, Hyun Cheol
AU - Han, Suk Hee
PY - 2010/11/1
Y1 - 2010/11/1
N2 - Using the low-field magnetoresistance measurement we have studied the electronic phase coherence of the graphene field effect transistor for different carrier types and densities. The characteristic time scales such as phase coherence time (τφ), intervalley scattering time (τi), and momentum relaxation time have been deduced by weak localization fit to the magnetoresistance. We found that the magnitude of τφ shows similar magnitudes for both types of charge carriers. In the lower density regime including the Dirac point, τφ increases rapidly as the density of carrier increases. However, τi shows a weak dependence of carrier type and density. The momentum relaxation time becomes saturated below 3 K regardless of carrier type and density, which is in contrast to the temperature dependence of τφ.
AB - Using the low-field magnetoresistance measurement we have studied the electronic phase coherence of the graphene field effect transistor for different carrier types and densities. The characteristic time scales such as phase coherence time (τφ), intervalley scattering time (τi), and momentum relaxation time have been deduced by weak localization fit to the magnetoresistance. We found that the magnitude of τφ shows similar magnitudes for both types of charge carriers. In the lower density regime including the Dirac point, τφ increases rapidly as the density of carrier increases. However, τi shows a weak dependence of carrier type and density. The momentum relaxation time becomes saturated below 3 K regardless of carrier type and density, which is in contrast to the temperature dependence of τφ.
KW - A. Graphene
KW - D. Phase coherence
KW - D. Weak localization
KW - E. Magnetoresistance
UR - http://www.scopus.com/inward/record.url?scp=77957265707&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957265707&partnerID=8YFLogxK
U2 - 10.1016/j.ssc.2010.08.020
DO - 10.1016/j.ssc.2010.08.020
M3 - Article
VL - 150
SP - 1987
EP - 1990
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 41-42
ER -