Electronic structures of GaN nanotubes

Seung Mi Lee, Young Hee Lee, Yong Gyoo Hwang, Cheol Jin Lee

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Density functional calculations are used to predict the electronic structures of GaN nanotubes. The graphitic GaN is an indirect band gap material with valence band maximum at K edge. Zigzag nanotube is a semiconductor with direct band gap, whereas armchair nanotube has an indirect band gap along the tube axis. The band gaps decrease with the decreasing diameter, contrary to the case of carbon nanotubes.

Original languageEnglish
Pages (from-to)S253-S257
JournalJournal of the Korean Physical Society
Volume34
Issue numberSUPPL. 3
Publication statusPublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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