Electronic transport mechanism for nonalloyed Ti-based Ohmic contacts to n-AlGaN

Ja Soon Jang, Tae Yeon Seong, Seong Ran Jeon

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have investigated the carrier transport mechanism of nonalloyed Ti-based Ohmic contacts to n-AlGaN using current-voltage-temperature and the specific contact resistance-temperature relations. It is shown that the theoretical result obtained using the field emission mode through the shallow-donor-assisted tunneling model is in agreement with the experimental data, although there is a small deviation below 383 K. The deviation is attributed to an increase of the self-compensation between donor-type and acceptorlike defects. This indicates that the electronic transport of the AlGaN contacts is sensitively dependent on Ga and oxygen/nitrogen related surface point defects.

Original languageEnglish
Article number046106
JournalJournal of Applied Physics
Volume100
Issue number4
DOIs
Publication statusPublished - 2006 Sep 11

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electric contacts
deviation
surface defects
contact resistance
electronics
point defects
field emission
nitrogen
temperature
defects
electric potential
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Electronic transport mechanism for nonalloyed Ti-based Ohmic contacts to n-AlGaN. / Jang, Ja Soon; Seong, Tae Yeon; Jeon, Seong Ran.

In: Journal of Applied Physics, Vol. 100, No. 4, 046106, 11.09.2006.

Research output: Contribution to journalArticle

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