Electronic transport mechanism for nonalloyed Ti-based Ohmic contacts to n-AlGaN

Ja Soon Jang; Tae Yeon Seong; Seong Ran Jeon

doi:10.1063/1.2335507

Electronic transport mechanism for nonalloyed Ti-based Ohmic contacts to n-AlGaN

Ja Soon Jang, Tae Yeon Seong, Seong Ran Jeon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have investigated the carrier transport mechanism of nonalloyed Ti-based Ohmic contacts to n-AlGaN using current-voltage-temperature and the specific contact resistance-temperature relations. It is shown that the theoretical result obtained using the field emission mode through the shallow-donor-assisted tunneling model is in agreement with the experimental data, although there is a small deviation below 383 K. The deviation is attributed to an increase of the self-compensation between donor-type and acceptorlike defects. This indicates that the electronic transport of the AlGaN contacts is sensitively dependent on Ga and oxygen/nitrogen related surface point defects.

Original language	English
Article number	046106
Journal	Journal of Applied Physics
Volume	100
Issue number	4
DOIs	https://doi.org/10.1063/1.2335507
Publication status	Published - 2006

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Physics and Astronomy(all)

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title = "Electronic transport mechanism for nonalloyed Ti-based Ohmic contacts to n-AlGaN",

abstract = "We have investigated the carrier transport mechanism of nonalloyed Ti-based Ohmic contacts to n-AlGaN using current-voltage-temperature and the specific contact resistance-temperature relations. It is shown that the theoretical result obtained using the field emission mode through the shallow-donor-assisted tunneling model is in agreement with the experimental data, although there is a small deviation below 383 K. The deviation is attributed to an increase of the self-compensation between donor-type and acceptorlike defects. This indicates that the electronic transport of the AlGaN contacts is sensitively dependent on Ga and oxygen/nitrogen related surface point defects.",

author = "Jang, {Ja Soon} and Seong, {Tae Yeon} and Jeon, {Seong Ran}",

note = "Funding Information: This work was supported by the basic research program of the Korea Science and Engineering Foundation (Grant No. R01-2006-000-10904-0). ",

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journal = "Journal of Applied Physics",

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T1 - Electronic transport mechanism for nonalloyed Ti-based Ohmic contacts to n-AlGaN

AU - Jang, Ja Soon

AU - Seong, Tae Yeon

AU - Jeon, Seong Ran

N1 - Funding Information: This work was supported by the basic research program of the Korea Science and Engineering Foundation (Grant No. R01-2006-000-10904-0).

PY - 2006

Y1 - 2006

N2 - We have investigated the carrier transport mechanism of nonalloyed Ti-based Ohmic contacts to n-AlGaN using current-voltage-temperature and the specific contact resistance-temperature relations. It is shown that the theoretical result obtained using the field emission mode through the shallow-donor-assisted tunneling model is in agreement with the experimental data, although there is a small deviation below 383 K. The deviation is attributed to an increase of the self-compensation between donor-type and acceptorlike defects. This indicates that the electronic transport of the AlGaN contacts is sensitively dependent on Ga and oxygen/nitrogen related surface point defects.

AB - We have investigated the carrier transport mechanism of nonalloyed Ti-based Ohmic contacts to n-AlGaN using current-voltage-temperature and the specific contact resistance-temperature relations. It is shown that the theoretical result obtained using the field emission mode through the shallow-donor-assisted tunneling model is in agreement with the experimental data, although there is a small deviation below 383 K. The deviation is attributed to an increase of the self-compensation between donor-type and acceptorlike defects. This indicates that the electronic transport of the AlGaN contacts is sensitively dependent on Ga and oxygen/nitrogen related surface point defects.

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U2 - 10.1063/1.2335507

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M3 - Article

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VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 046106

ER -

Electronic transport mechanism for nonalloyed Ti-based Ohmic contacts to n-AlGaN

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