Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN

Ja Soon Jang, Tae Yeon Seong

Research output: Contribution to journalArticle

71 Citations (Scopus)

Abstract

We report on the electronic transport mechanisms for nonalloyed Pt Ohmic contacts to p-GaN which were surface treated using a buffered oxide etch solution and (NH4)2Sx. Measurements show that the value of the effective Richardson constant (A **) is 12 A cm-2 K-2, which is considerably smaller than the theoretical value of 103.8 A cm-2 K-2. Based on Hall-effect results, the two-step surface-treated contact is modeled to consist of a Pt/p+-/p-GaN structure, and the conventionally treated contact consists of a Pt/p-GaN structure. The theoretical results obtained using these models are compared with the experimental data. It is shown that for the conventionally treated contact thermionic emission dominates the current flow, whereas for the two-step surface-treated contact. field emission is dominant.

Original languageEnglish
Pages (from-to)2743-2745
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number19
Publication statusPublished - 2000 May 8
Externally publishedYes

Fingerprint

electric contacts
electronics
thermionic emission
Hall effect
field emission
oxides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN. / Jang, Ja Soon; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 76, No. 19, 08.05.2000, p. 2743-2745.

Research output: Contribution to journalArticle

@article{4bad676de34748eb96669cea168127b8,
title = "Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN",
abstract = "We report on the electronic transport mechanisms for nonalloyed Pt Ohmic contacts to p-GaN which were surface treated using a buffered oxide etch solution and (NH4)2Sx. Measurements show that the value of the effective Richardson constant (A **) is 12 A cm-2 K-2, which is considerably smaller than the theoretical value of 103.8 A cm-2 K-2. Based on Hall-effect results, the two-step surface-treated contact is modeled to consist of a Pt/p+-/p-GaN structure, and the conventionally treated contact consists of a Pt/p-GaN structure. The theoretical results obtained using these models are compared with the experimental data. It is shown that for the conventionally treated contact thermionic emission dominates the current flow, whereas for the two-step surface-treated contact. field emission is dominant.",
author = "Jang, {Ja Soon} and Seong, {Tae Yeon}",
year = "2000",
month = "5",
day = "8",
language = "English",
volume = "76",
pages = "2743--2745",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN

AU - Jang, Ja Soon

AU - Seong, Tae Yeon

PY - 2000/5/8

Y1 - 2000/5/8

N2 - We report on the electronic transport mechanisms for nonalloyed Pt Ohmic contacts to p-GaN which were surface treated using a buffered oxide etch solution and (NH4)2Sx. Measurements show that the value of the effective Richardson constant (A **) is 12 A cm-2 K-2, which is considerably smaller than the theoretical value of 103.8 A cm-2 K-2. Based on Hall-effect results, the two-step surface-treated contact is modeled to consist of a Pt/p+-/p-GaN structure, and the conventionally treated contact consists of a Pt/p-GaN structure. The theoretical results obtained using these models are compared with the experimental data. It is shown that for the conventionally treated contact thermionic emission dominates the current flow, whereas for the two-step surface-treated contact. field emission is dominant.

AB - We report on the electronic transport mechanisms for nonalloyed Pt Ohmic contacts to p-GaN which were surface treated using a buffered oxide etch solution and (NH4)2Sx. Measurements show that the value of the effective Richardson constant (A **) is 12 A cm-2 K-2, which is considerably smaller than the theoretical value of 103.8 A cm-2 K-2. Based on Hall-effect results, the two-step surface-treated contact is modeled to consist of a Pt/p+-/p-GaN structure, and the conventionally treated contact consists of a Pt/p-GaN structure. The theoretical results obtained using these models are compared with the experimental data. It is shown that for the conventionally treated contact thermionic emission dominates the current flow, whereas for the two-step surface-treated contact. field emission is dominant.

UR - http://www.scopus.com/inward/record.url?scp=0000739151&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000739151&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000739151

VL - 76

SP - 2743

EP - 2745

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -