Electrophoretic deposition of CdSe@CdZnS-ZnS multi core-shell QDs for quantum efficiency control of InGaN/GaN MQW LEDs

Sudarsan Raj; Rizwan Khan; In Hwan Lee; Kwang Un Jeong; Yeon Tae Yu

doi:10.1039/c6ra12925k

Electrophoretic deposition of CdSe@CdZnS-ZnS multi core-shell QDs for quantum efficiency control of InGaN/GaN MQW LEDs

Sudarsan Raj, Rizwan Khan, In Hwan Lee, Kwang Un Jeong, Yeon Tae Yu

Research output: Contribution to journal › Article › peer-review

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Abstract

CdSe@CdZnS-ZnS multi core-shell quantum dots (MCSQDs) were deposited on fluorine doped tin oxide (FTO) glass substrates as well as InGaN/GaN MQW LEDs by electrophoretic deposition (EPD). The as synthesized QDs having particle size 6 nm with emission peak at 596 nm. The number of QDs deposited on the substrate increased with prolonged deposition times and applied voltages. Lower voltage (20 V) deposition on FTO glass showed linearity in photoluminescence (PL) peak intensity. The green emitted InGaN/GaN MQW LEDs showed the dual PL emission after EPD of CdSe@CdZnS-ZnS MCSQDs. Surface roughness and PL peak intensity nearby 596 nm showed a reverse relationship in QDs deposited InGaN/GaN MQW LEDs.

Original language	English
Pages (from-to)	95032-95037
Number of pages	6
Journal	RSC Advances
Volume	6
Issue number	97
DOIs	https://doi.org/10.1039/c6ra12925k
Publication status	Published - 2016
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)

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@article{5cfb49ee341d4d1a91db3d606dad1248,

title = "Electrophoretic deposition of CdSe@CdZnS-ZnS multi core-shell QDs for quantum efficiency control of InGaN/GaN MQW LEDs",

abstract = "CdSe@CdZnS-ZnS multi core-shell quantum dots (MCSQDs) were deposited on fluorine doped tin oxide (FTO) glass substrates as well as InGaN/GaN MQW LEDs by electrophoretic deposition (EPD). The as synthesized QDs having particle size 6 nm with emission peak at 596 nm. The number of QDs deposited on the substrate increased with prolonged deposition times and applied voltages. Lower voltage (20 V) deposition on FTO glass showed linearity in photoluminescence (PL) peak intensity. The green emitted InGaN/GaN MQW LEDs showed the dual PL emission after EPD of CdSe@CdZnS-ZnS MCSQDs. Surface roughness and PL peak intensity nearby 596 nm showed a reverse relationship in QDs deposited InGaN/GaN MQW LEDs.",

author = "Sudarsan Raj and Rizwan Khan and Lee, {In Hwan} and Jeong, {Kwang Un} and Yu, {Yeon Tae}",

note = "Funding Information: This paper was supported by (1) BK21 plus program from the Ministry of Education and Human-Resource Development, (2) National Research Foundation grant funded by the Korea government (MSIP) (BRL No. 2015042417, 2016R1A2B4014090) and (3) Research Base Construction Fund {"}Support Program{"} funded by Chonbuk National University in 2016. Publisher Copyright: {\textcopyright} 2016 The Royal Society of Chemistry.",

year = "2016",

doi = "10.1039/c6ra12925k",

language = "English",

volume = "6",

pages = "95032--95037",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "97",

}

TY - JOUR

T1 - Electrophoretic deposition of CdSe@CdZnS-ZnS multi core-shell QDs for quantum efficiency control of InGaN/GaN MQW LEDs

AU - Raj, Sudarsan

AU - Khan, Rizwan

AU - Lee, In Hwan

AU - Jeong, Kwang Un

AU - Yu, Yeon Tae

N1 - Funding Information: This paper was supported by (1) BK21 plus program from the Ministry of Education and Human-Resource Development, (2) National Research Foundation grant funded by the Korea government (MSIP) (BRL No. 2015042417, 2016R1A2B4014090) and (3) Research Base Construction Fund "Support Program" funded by Chonbuk National University in 2016. Publisher Copyright: © 2016 The Royal Society of Chemistry.

PY - 2016

Y1 - 2016

N2 - CdSe@CdZnS-ZnS multi core-shell quantum dots (MCSQDs) were deposited on fluorine doped tin oxide (FTO) glass substrates as well as InGaN/GaN MQW LEDs by electrophoretic deposition (EPD). The as synthesized QDs having particle size 6 nm with emission peak at 596 nm. The number of QDs deposited on the substrate increased with prolonged deposition times and applied voltages. Lower voltage (20 V) deposition on FTO glass showed linearity in photoluminescence (PL) peak intensity. The green emitted InGaN/GaN MQW LEDs showed the dual PL emission after EPD of CdSe@CdZnS-ZnS MCSQDs. Surface roughness and PL peak intensity nearby 596 nm showed a reverse relationship in QDs deposited InGaN/GaN MQW LEDs.

AB - CdSe@CdZnS-ZnS multi core-shell quantum dots (MCSQDs) were deposited on fluorine doped tin oxide (FTO) glass substrates as well as InGaN/GaN MQW LEDs by electrophoretic deposition (EPD). The as synthesized QDs having particle size 6 nm with emission peak at 596 nm. The number of QDs deposited on the substrate increased with prolonged deposition times and applied voltages. Lower voltage (20 V) deposition on FTO glass showed linearity in photoluminescence (PL) peak intensity. The green emitted InGaN/GaN MQW LEDs showed the dual PL emission after EPD of CdSe@CdZnS-ZnS MCSQDs. Surface roughness and PL peak intensity nearby 596 nm showed a reverse relationship in QDs deposited InGaN/GaN MQW LEDs.

UR - http://www.scopus.com/inward/record.url?scp=84991248763&partnerID=8YFLogxK

U2 - 10.1039/c6ra12925k

DO - 10.1039/c6ra12925k

M3 - Article

AN - SCOPUS:84991248763

SN - 2046-2069

VL - 6

SP - 95032

EP - 95037

JO - RSC Advances

JF - RSC Advances

IS - 97

ER -

Electrophoretic deposition of CdSe@CdZnS-ZnS multi core-shell QDs for quantum efficiency control of InGaN/GaN MQW LEDs

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