TY - JOUR
T1 - Embedded DRAM-Based Memory Customization for Low-Cost FFT Processor Design
AU - Kang, Gyuseong
AU - Choi, Woong
AU - Park, Jongsun
N1 - Funding Information:
Manuscript received May 13, 2017; revised August 10, 2017; accepted September 9, 2017. Date of publication September 28, 2017; date of current version November 22, 2017. This work was supported in part by the Information Technology Research and Development Program of Korea Evaluation Institute of Industrial Technology (Design technology development of ultralow voltage operating circuit and IP for smart sensor SoC) under Grant 10052716 and in part by the National Research Foundation of Korea under Grant 2015M3D1A1070465 and Grant 2016R1A2B4015329. (Corresponding author: Jongsun Park.) The authors are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea (e-mail: jongsun@korea.ac.kr). Digital Object Identifier 10.1109/TVLSI.2017.2752265
Publisher Copyright:
© 1993-2012 IEEE.
PY - 2017/12
Y1 - 2017/12
N2 - In this paper, we present embedded dynamic random access memory (eDRAM)-based memory customization techniques for low-cost fast Fourier transform (FFT) processor design. The main idea is based on the observation that the FFT processor has regular and predictable memory access patterns, and it can be efficiently exploited for memory customization using eDRAM. The memory customization approaches are applied to both of the pipelined and memory-based FFT architectures. In the pipelined architecture, the read wordline (RWL) coupling write assist and data packing schemes are employed to reduce the redundant RWL and wordline driving, respectively, in column-interleaved memory arrays. The memory address decoder is also simplified with thermometer code by exploiting the sequential access patterns. For the memory-based architecture, the modified cached-memory structure is employed in addition to the techniques used in the pipelined FFT architecture. The hardware implementation results of 2k-point FFT with a 0.11- μm CMOS technology show that the proposed eDRAM-based pipelined and cached-memory FFTs achieve 26.8% and 33.2% power savings over the static RAM-based FFT design, respectively.
AB - In this paper, we present embedded dynamic random access memory (eDRAM)-based memory customization techniques for low-cost fast Fourier transform (FFT) processor design. The main idea is based on the observation that the FFT processor has regular and predictable memory access patterns, and it can be efficiently exploited for memory customization using eDRAM. The memory customization approaches are applied to both of the pipelined and memory-based FFT architectures. In the pipelined architecture, the read wordline (RWL) coupling write assist and data packing schemes are employed to reduce the redundant RWL and wordline driving, respectively, in column-interleaved memory arrays. The memory address decoder is also simplified with thermometer code by exploiting the sequential access patterns. For the memory-based architecture, the modified cached-memory structure is employed in addition to the techniques used in the pipelined FFT architecture. The hardware implementation results of 2k-point FFT with a 0.11- μm CMOS technology show that the proposed eDRAM-based pipelined and cached-memory FFTs achieve 26.8% and 33.2% power savings over the static RAM-based FFT design, respectively.
KW - 2T gain cell
KW - fast fourier transform (FFT)
KW - logic-compatible eDRAM
UR - http://www.scopus.com/inward/record.url?scp=85030780444&partnerID=8YFLogxK
U2 - 10.1109/TVLSI.2017.2752265
DO - 10.1109/TVLSI.2017.2752265
M3 - Article
AN - SCOPUS:85030780444
SN - 1063-8210
VL - 25
SP - 3484
EP - 3494
JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
JF - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IS - 12
M1 - 8052523
ER -