Emission characteristic of diamond-tip FEA fabricated by transfer mold technique

Seong Jin Kim, Byeong Kwon Ju, Yun-Hi Lee, Beom Soo Park, Young Joon Baik, Sungkyoo Lim, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Stripe-shaped diamond-tip field emitter arrays were fabricated by using transfer mold technique. The tip radius of each diamond emitter was about 300 angstroms. The current density of 800 μA/cm2 was obtained from the current-voltage measurement of the diamond-tip field emitter arrays. The emission current was measured under the pressure of 1×10-4, 1×10-5, 1×10-6 Torr, respectively. No difference in emission characteristics of the field emitter arrays under different pressure condition was observed.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages526-529
Number of pages4
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

Fingerprint

emitters
diamonds
electrical measurement
current density
radii

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Kim, S. J., Ju, B. K., Lee, Y-H., Park, B. S., Baik, Y. J., Lim, S., & Oh, M. H. (1996). Emission characteristic of diamond-tip FEA fabricated by transfer mold technique. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 526-529). Piscataway, NJ, United States: IEEE.

Emission characteristic of diamond-tip FEA fabricated by transfer mold technique. / Kim, Seong Jin; Ju, Byeong Kwon; Lee, Yun-Hi; Park, Beom Soo; Baik, Young Joon; Lim, Sungkyoo; Oh, Myung Hwan.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. p. 526-529.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, SJ, Ju, BK, Lee, Y-H, Park, BS, Baik, YJ, Lim, S & Oh, MH 1996, Emission characteristic of diamond-tip FEA fabricated by transfer mold technique. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 526-529, Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, 96/7/7.
Kim SJ, Ju BK, Lee Y-H, Park BS, Baik YJ, Lim S et al. Emission characteristic of diamond-tip FEA fabricated by transfer mold technique. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States: IEEE. 1996. p. 526-529
Kim, Seong Jin ; Ju, Byeong Kwon ; Lee, Yun-Hi ; Park, Beom Soo ; Baik, Young Joon ; Lim, Sungkyoo ; Oh, Myung Hwan. / Emission characteristic of diamond-tip FEA fabricated by transfer mold technique. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. pp. 526-529
@inproceedings{3b3806a014cd40d3ae9866461ba70ef5,
title = "Emission characteristic of diamond-tip FEA fabricated by transfer mold technique",
abstract = "Stripe-shaped diamond-tip field emitter arrays were fabricated by using transfer mold technique. The tip radius of each diamond emitter was about 300 angstroms. The current density of 800 μA/cm2 was obtained from the current-voltage measurement of the diamond-tip field emitter arrays. The emission current was measured under the pressure of 1×10-4, 1×10-5, 1×10-6 Torr, respectively. No difference in emission characteristics of the field emitter arrays under different pressure condition was observed.",
author = "Kim, {Seong Jin} and Ju, {Byeong Kwon} and Yun-Hi Lee and Park, {Beom Soo} and Baik, {Young Joon} and Sungkyoo Lim and Oh, {Myung Hwan}",
year = "1996",
month = "12",
day = "1",
language = "English",
pages = "526--529",
booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",
publisher = "IEEE",

}

TY - GEN

T1 - Emission characteristic of diamond-tip FEA fabricated by transfer mold technique

AU - Kim, Seong Jin

AU - Ju, Byeong Kwon

AU - Lee, Yun-Hi

AU - Park, Beom Soo

AU - Baik, Young Joon

AU - Lim, Sungkyoo

AU - Oh, Myung Hwan

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Stripe-shaped diamond-tip field emitter arrays were fabricated by using transfer mold technique. The tip radius of each diamond emitter was about 300 angstroms. The current density of 800 μA/cm2 was obtained from the current-voltage measurement of the diamond-tip field emitter arrays. The emission current was measured under the pressure of 1×10-4, 1×10-5, 1×10-6 Torr, respectively. No difference in emission characteristics of the field emitter arrays under different pressure condition was observed.

AB - Stripe-shaped diamond-tip field emitter arrays were fabricated by using transfer mold technique. The tip radius of each diamond emitter was about 300 angstroms. The current density of 800 μA/cm2 was obtained from the current-voltage measurement of the diamond-tip field emitter arrays. The emission current was measured under the pressure of 1×10-4, 1×10-5, 1×10-6 Torr, respectively. No difference in emission characteristics of the field emitter arrays under different pressure condition was observed.

UR - http://www.scopus.com/inward/record.url?scp=0030349725&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030349725&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030349725

SP - 526

EP - 529

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

PB - IEEE

CY - Piscataway, NJ, United States

ER -