Emission characteristic of diamond-tip FEA fabricated by transfer mold technique

Seong Jin Kim, Byeong Kwon Ju, Yun Hi Lee, Beom Soo Park, Young Joon Baik, Sungkyoo Lim, Myung Hwan Oh

Research output: Contribution to conferencePaper

Abstract

Stripe-shaped diamond-tip field emitter arrays were fabricated by using transfer mold technique. The tip radius of each diamond emitter was about 300 angstroms. The current density of 800 μA/cm2 was obtained from the current-voltage measurement of the diamond-tip field emitter arrays. The emission current was measured under the pressure of 1×10-4, 1×10-5, 1×10-6 Torr, respectively. No difference in emission characteristics of the field emitter arrays under different pressure condition was observed.

Original languageEnglish
Pages526-529
Number of pages4
Publication statusPublished - 1996
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

ASJC Scopus subject areas

  • Surfaces and Interfaces

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  • Cite this

    Kim, S. J., Ju, B. K., Lee, Y. H., Park, B. S., Baik, Y. J., Lim, S., & Oh, M. H. (1996). Emission characteristic of diamond-tip FEA fabricated by transfer mold technique. 526-529. Paper presented at Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, .