Abstract
In our previous work1, the etched features of the thin Chromium (Cr) films deposited on SiO2-Si substrate had been investigated as a function of substrate temperature. Based on the above experimental results, we fabricated the two kinds of Cr-gated Mo-tip field emitter arrays (FEAs): one is a FEAs with tapered gate electrode (tapering gated FEAs, θt ≤ 90°) and the other is a FEAs with tapering-free gate electrode (non-tapering gated FEAs, θt = 90°). And we revealed that the field emission characteristics of non-tapering gated FEAs have superiority to that of tapering gated FEAs. In this work, the non-tapering gated FEAs were characterized in field emission properties and applied to the cathode of electron gun for Cathode Ray Tube(CRT).
| Original language | English |
|---|---|
| Pages (from-to) | 1253-1256 |
| Number of pages | 4 |
| Journal | SID Conference Record of the International Display Research Conference |
| Publication status | Published - 2001 |
| Event | Asia Display/IDW 2001 - Nagoya, Japan Duration: 2002 Oct 16 → 2002 Oct 19 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Kim, H., Park, J. W., Lee, J. W., Lee, Y. H., Jang, J., & Ju, B. K. (2001). Emission characteristics of non-tapering gated FEAs and its application to cold cathode electron gun. SID Conference Record of the International Display Research Conference, 1253-1256.