Emission characteristics of non-tapering gated FEAs and its application to cold cathode electron gun

Hoon Kim; Jong Won Park; Joo Won Lee; Yun Hi Lee; Jin Jang; Byeong Kwon Ju

Emission characteristics of non-tapering gated FEAs and its application to cold cathode electron gun

Hoon Kim, Jong Won Park, Joo Won Lee, Yun Hi Lee, Jin Jang, Byeong Kwon Ju

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

In our previous work¹, the etched features of the thin Chromium (Cr) films deposited on SiO₂-Si substrate had been investigated as a function of substrate temperature. Based on the above experimental results, we fabricated the two kinds of Cr-gated Mo-tip field emitter arrays (FEAs): one is a FEAs with tapered gate electrode (tapering gated FEAs, θ_t ≤ 90°) and the other is a FEAs with tapering-free gate electrode (non-tapering gated FEAs, θ_t = 90°). And we revealed that the field emission characteristics of non-tapering gated FEAs have superiority to that of tapering gated FEAs. In this work, the non-tapering gated FEAs were characterized in field emission properties and applied to the cathode of electron gun for Cathode Ray Tube(CRT).

Original language	English
Pages (from-to)	1253-1256
Number of pages	4
Journal	SID Conference Record of the International Display Research Conference
Publication status	Published - 2001
Event	Asia Display/IDW 2001 - Nagoya, Japan Duration: 2002 Oct 16 → 2002 Oct 19

ASJC Scopus subject areas

Electrical and Electronic Engineering

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@article{645aca0e405e43aeb8e9a3f5076790ce,

title = "Emission characteristics of non-tapering gated FEAs and its application to cold cathode electron gun",

abstract = "In our previous work1, the etched features of the thin Chromium (Cr) films deposited on SiO2-Si substrate had been investigated as a function of substrate temperature. Based on the above experimental results, we fabricated the two kinds of Cr-gated Mo-tip field emitter arrays (FEAs): one is a FEAs with tapered gate electrode (tapering gated FEAs, θt ≤ 90°) and the other is a FEAs with tapering-free gate electrode (non-tapering gated FEAs, θt = 90°). And we revealed that the field emission characteristics of non-tapering gated FEAs have superiority to that of tapering gated FEAs. In this work, the non-tapering gated FEAs were characterized in field emission properties and applied to the cathode of electron gun for Cathode Ray Tube(CRT).",

author = "Hoon Kim and Park, {Jong Won} and Lee, {Joo Won} and Lee, {Yun Hi} and Jin Jang and Ju, {Byeong Kwon}",

year = "2001",

language = "English",

pages = "1253--1256",

journal = "SID Conference Record of the International Display Research Conference",

issn = "1083-1312",

publisher = "Society for Information Display",

note = "Asia Display/IDW 2001 ; Conference date: 16-10-2002 Through 19-10-2002",

}

TY - JOUR

T1 - Emission characteristics of non-tapering gated FEAs and its application to cold cathode electron gun

AU - Kim, Hoon

AU - Park, Jong Won

AU - Lee, Joo Won

AU - Lee, Yun Hi

AU - Jang, Jin

AU - Ju, Byeong Kwon

PY - 2001

Y1 - 2001

N2 - In our previous work1, the etched features of the thin Chromium (Cr) films deposited on SiO2-Si substrate had been investigated as a function of substrate temperature. Based on the above experimental results, we fabricated the two kinds of Cr-gated Mo-tip field emitter arrays (FEAs): one is a FEAs with tapered gate electrode (tapering gated FEAs, θt ≤ 90°) and the other is a FEAs with tapering-free gate electrode (non-tapering gated FEAs, θt = 90°). And we revealed that the field emission characteristics of non-tapering gated FEAs have superiority to that of tapering gated FEAs. In this work, the non-tapering gated FEAs were characterized in field emission properties and applied to the cathode of electron gun for Cathode Ray Tube(CRT).

AB - In our previous work1, the etched features of the thin Chromium (Cr) films deposited on SiO2-Si substrate had been investigated as a function of substrate temperature. Based on the above experimental results, we fabricated the two kinds of Cr-gated Mo-tip field emitter arrays (FEAs): one is a FEAs with tapered gate electrode (tapering gated FEAs, θt ≤ 90°) and the other is a FEAs with tapering-free gate electrode (non-tapering gated FEAs, θt = 90°). And we revealed that the field emission characteristics of non-tapering gated FEAs have superiority to that of tapering gated FEAs. In this work, the non-tapering gated FEAs were characterized in field emission properties and applied to the cathode of electron gun for Cathode Ray Tube(CRT).

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M3 - Conference article

AN - SCOPUS:0035782756

SP - 1253

EP - 1256

JO - SID Conference Record of the International Display Research Conference

JF - SID Conference Record of the International Display Research Conference

SN - 1083-1312

T2 - Asia Display/IDW 2001

Y2 - 16 October 2002 through 19 October 2002

ER -