In our previous work1, the etched features of the thin Chromium (Cr) films deposited on SiO2-Si substrate had been investigated as a function of substrate temperature. Based on the above experimental results, we fabricated the two kinds of Cr-gated Mo-tip field emitter arrays (FEAs): one is a FEAs with tapered gate electrode (tapering gated FEAs, θt ≤ 90°) and the other is a FEAs with tapering-free gate electrode (non-tapering gated FEAs, θt = 90°). And we revealed that the field emission characteristics of non-tapering gated FEAs have superiority to that of tapering gated FEAs. In this work, the non-tapering gated FEAs were characterized in field emission properties and applied to the cathode of electron gun for Cathode Ray Tube(CRT).
|Number of pages||4|
|Journal||SID Conference Record of the International Display Research Conference|
|Publication status||Published - 2001|
|Event||Asia Display/IDW 2001 - Nagoya, Japan|
Duration: 2002 Oct 16 → 2002 Oct 19
ASJC Scopus subject areas
- Electrical and Electronic Engineering