Emission characteristics of the molybdenum-coated silicon field emitter array

Heung Woo Park; Byeong Kwon Ju; Yun Hi Lee; Jung Ho Park; Myung Hwan Oh

doi:10.1143/jjap.35.l1301

Emission characteristics of the molybdenum-coated silicon field emitter array

Heung Woo Park, Byeong Kwon Ju, Yun Hi Lee, Jung Ho Park, Myung Hwan Oh

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the reoxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.

Original language	English
Pages (from-to)	L1301-L1304
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	35
Issue number	10 PART A
DOIs	https://doi.org/10.1143/jjap.35.l1301
Publication status	Published - 1996 Oct 1

Keywords

Current fluctuation
Fowler-Nordheim
Reactive ion etching
Sharpening
Tip

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.35.l1301

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title = "Emission characteristics of the molybdenum-coated silicon field emitter array",

abstract = "Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the reoxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.",

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AU - Oh, Myung Hwan

PY - 1996/10/1

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N2 - Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the reoxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.

AB - Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the reoxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.

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KW - Reactive ion etching

KW - Sharpening

KW - Tip

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Emission characteristics of the molybdenum-coated silicon field emitter array

Abstract

Keywords

ASJC Scopus subject areas

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