Energy-Efficient III-V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing

Dae Hwan Ahn, Suman Hu, Kyeol Ko, Donghee Park, Hoyoung Suh, Gyu Tae Kim, Jae Hoon Han, Jin Dong Song, Yeon Joo Jeong

Research output: Contribution to journalArticlepeer-review

Abstract

A charge trap device based on field-effect transistors (FET) is a promising candidate for artificial synapses because of its high reliability and mature fabrication technology. However, conventional MOSFET-based charge trap synapses require a strong stimulus for synaptic update because of their inefficient hot-carrier injection into the charge trapping layer, consequently causing a slow speed operation and large power consumption. Here, we propose a highly efficient charge trap synapse using III-V materials-based tunnel field-effect transistor (TFET). Our synaptic TFETs present superior subthreshold swing and improved charge trapping ability utilizing both carriers as charge trapping sources: hot holes created by impact ionization in the narrow bandgap InGaAs after being provided from the p+-source, and band-to-band tunneling hot electrons (BBHEs) generated at the abrupt p+n junctions in the TFETs. Thanks to these advances, our devices achieved outstanding efficiency in synaptic characteristics with a 5750 times faster synaptic update speed and 51 times lower sub-fJ/um2energy consumption per single synaptic update in comparison to the MOSFET-based synapse. An artificial neural network (ANN) simulation also confirmed a high recognition accuracy of handwritten digits up to ∼90% in a multilayer perceptron neural network based on our synaptic devices.

Original languageEnglish
Pages (from-to)24592-24601
Number of pages10
JournalACS Applied Materials and Interfaces
Volume14
Issue number21
DOIs
Publication statusPublished - 2022 Jun 1

Keywords

  • charge trap synapse
  • hot carrier
  • InGaAs
  • neuromorphic
  • tunneling field-effect transistors

ASJC Scopus subject areas

  • Materials Science(all)

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