Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

Vishnukanthan Venkatachalapathy, Augustinas Galeckas, In-Hwan Lee, Andrej Yu Kuznetsov

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

ZnO properties were investigated as a function of AlN buffer layer thickness (0100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

Original languageEnglish
Pages (from-to)1476-1480
Number of pages5
JournalPhysica B: Condensed Matter
Volume407
Issue number10
DOIs
Publication statusPublished - 2012 May 15
Externally publishedYes

Fingerprint

Buffers
Tuning
buffers
tuning
engineering
Buffer layers
Excitons
excitons
Vapor phase epitaxy
plane strain
vapor phase epitaxy
Topography
crystallinity
Photoluminescence
topography
x ray diffraction
templates
Diffraction
Metals
photoluminescence

Keywords

  • AlN buffer
  • Metal organic vapor phase epitaxy
  • Photoluminescence
  • Strain relaxation
  • ZnO

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness. / Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Lee, In-Hwan; Kuznetsov, Andrej Yu.

In: Physica B: Condensed Matter, Vol. 407, No. 10, 15.05.2012, p. 1476-1480.

Research output: Contribution to journalArticle

Venkatachalapathy, Vishnukanthan ; Galeckas, Augustinas ; Lee, In-Hwan ; Kuznetsov, Andrej Yu. / Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness. In: Physica B: Condensed Matter. 2012 ; Vol. 407, No. 10. pp. 1476-1480.
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