Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

Vishnukanthan Venkatachalapathy, Augustinas Galeckas, In Hwan Lee, Andrej Yu Kuznetsov

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


ZnO properties were investigated as a function of AlN buffer layer thickness (0100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

Original languageEnglish
Pages (from-to)1476-1480
Number of pages5
JournalPhysica B: Condensed Matter
Issue number10
Publication statusPublished - 2012 May 15
Externally publishedYes


  • AlN buffer
  • Metal organic vapor phase epitaxy
  • Photoluminescence
  • Strain relaxation
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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