Enhanced charge injection in pentacene field-effect transistors with graphene electrodes

Sangchul Lee, Gunho Jo, Seok Ju Kang, Gunuk Wang, Minhyeok Choe, Woojin Park, Dong Yu Kim, Yung Ho Kahng, Takhee Lee

Research output: Contribution to journalArticle

105 Citations (Scopus)

Abstract

Pentacene organic field-effect transistors with multilayer graphene electrodes exhibit a lower contact resistance and lower charge-injection barrier height than those with conventional Au electrodes. This enhancement in performance is related to the favorable dipole layer formation at the graphene/pentacene interface.

Original languageEnglish
Pages (from-to)100-105
Number of pages6
JournalAdvanced Materials
Volume23
Issue number1
DOIs
Publication statusPublished - 2011 Jan 4
Externally publishedYes

Fingerprint

Charge injection
Graphite
Field effect transistors
Graphene
Organic field effect transistors
Electrodes
Contact resistance
Multilayers
pentacene

Keywords

  • Charge transport
  • Electrodes
  • Graphene
  • Organic field-effect transistors
  • Pentacene

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Enhanced charge injection in pentacene field-effect transistors with graphene electrodes. / Lee, Sangchul; Jo, Gunho; Kang, Seok Ju; Wang, Gunuk; Choe, Minhyeok; Park, Woojin; Kim, Dong Yu; Kahng, Yung Ho; Lee, Takhee.

In: Advanced Materials, Vol. 23, No. 1, 04.01.2011, p. 100-105.

Research output: Contribution to journalArticle

Lee, S, Jo, G, Kang, SJ, Wang, G, Choe, M, Park, W, Kim, DY, Kahng, YH & Lee, T 2011, 'Enhanced charge injection in pentacene field-effect transistors with graphene electrodes', Advanced Materials, vol. 23, no. 1, pp. 100-105. https://doi.org/10.1002/adma.201003165
Lee, Sangchul ; Jo, Gunho ; Kang, Seok Ju ; Wang, Gunuk ; Choe, Minhyeok ; Park, Woojin ; Kim, Dong Yu ; Kahng, Yung Ho ; Lee, Takhee. / Enhanced charge injection in pentacene field-effect transistors with graphene electrodes. In: Advanced Materials. 2011 ; Vol. 23, No. 1. pp. 100-105.
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