Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers

Hyunsoo Kim, Jaehee Cho, Jeong Wook Lee, Sukho Yoon, Hyungkun Kim, Cheolsoo Sone, Yongjo Park, Tae Yeon Seong

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n-type layers. Compared with standard LEDs, LED fabricated with the textured n-type layers produced a significant improvement in the output power, depending on the reflectivity of the n electrode, the etch-pit size, and the chip dimension. The textured LEDs were found to yield the output power enhancement as high as 54%. However, it was also found that the electrical property of the textured LEDs can be degraded when the size of the etch pits is too large, indicating that a well-controlled texturing process is required for the realization of high-efficiency LEDs.

Original languageEnglish
Article number161110
JournalApplied Physics Letters
Volume90
Issue number16
DOIs
Publication statusPublished - 2007 Apr 30

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light emitting diodes
augmentation
output
electrical properties
chips
reflectance
electrodes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers. / Kim, Hyunsoo; Cho, Jaehee; Lee, Jeong Wook; Yoon, Sukho; Kim, Hyungkun; Sone, Cheolsoo; Park, Yongjo; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 90, No. 16, 161110, 30.04.2007.

Research output: Contribution to journalArticle

Kim, Hyunsoo ; Cho, Jaehee ; Lee, Jeong Wook ; Yoon, Sukho ; Kim, Hyungkun ; Sone, Cheolsoo ; Park, Yongjo ; Seong, Tae Yeon. / Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers. In: Applied Physics Letters. 2007 ; Vol. 90, No. 16.
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