Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching

Younghun Jung, Jihyun Kim, Soohwan Jang, Kwang Hyeon Baik, Yong Gon Seo, Sung Min Hwang

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The extraction efficiency of nonpolar a-plane (11-20) GaN LEDs on sapphire substrates has been enhanced by selectively etching the mesa sidewall faces and the n-type GaN surfaces with photoenhanced chemical wet etching. Submicron-sized trigonal prisms having prismatic planes of {1 -100} were clearly displayed on the n-type GaN surfaces as well as the sidewall face after 5 min etching at 60°C. The radiation patterns have shown that more light is extracted in all directions and the output powers of surface textured a-plane GaN LEDs have increased by 25% compared with control samples. PEC wet etching produced unique feature of etching morphology on the mesa sidewall faces and the n-type GaN surface.

Original languageEnglish
Pages (from-to)9728-9732
Number of pages5
JournalOptics Express
Volume18
Issue number9
DOIs
Publication statusPublished - 2010 Apr 26

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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