Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching

Younghun Jung, Ji Hyun Kim, Soohwan Jang, Kwang Hyeon Baik, Yong Gon Seo, Sung Min Hwang

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The extraction efficiency of nonpolar a-plane (11-20) GaN LEDs on sapphire substrates has been enhanced by selectively etching the mesa sidewall faces and the n-type GaN surfaces with photoenhanced chemical wet etching. Submicron-sized trigonal prisms having prismatic planes of {1 -100} were clearly displayed on the n-type GaN surfaces as well as the sidewall face after 5 min etching at 60°C. The radiation patterns have shown that more light is extracted in all directions and the output powers of surface textured a-plane GaN LEDs have increased by 25% compared with control samples. PEC wet etching produced unique feature of etching morphology on the mesa sidewall faces and the n-type GaN surface.

Original languageEnglish
Pages (from-to)9728-9732
Number of pages5
JournalOptics Express
Volume18
Issue number9
DOIs
Publication statusPublished - 2010 Apr 26

Fingerprint

sapphire
light emitting diodes
etching
mesas
prisms
output
radiation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching. / Jung, Younghun; Kim, Ji Hyun; Jang, Soohwan; Baik, Kwang Hyeon; Seo, Yong Gon; Hwang, Sung Min.

In: Optics Express, Vol. 18, No. 9, 26.04.2010, p. 9728-9732.

Research output: Contribution to journalArticle

Jung, Younghun ; Kim, Ji Hyun ; Jang, Soohwan ; Baik, Kwang Hyeon ; Seo, Yong Gon ; Hwang, Sung Min. / Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching. In: Optics Express. 2010 ; Vol. 18, No. 9. pp. 9728-9732.
@article{a1971a77cb4a41d8a5821b9e9e52e21e,
title = "Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching",
abstract = "The extraction efficiency of nonpolar a-plane (11-20) GaN LEDs on sapphire substrates has been enhanced by selectively etching the mesa sidewall faces and the n-type GaN surfaces with photoenhanced chemical wet etching. Submicron-sized trigonal prisms having prismatic planes of {1 -100} were clearly displayed on the n-type GaN surfaces as well as the sidewall face after 5 min etching at 60°C. The radiation patterns have shown that more light is extracted in all directions and the output powers of surface textured a-plane GaN LEDs have increased by 25{\%} compared with control samples. PEC wet etching produced unique feature of etching morphology on the mesa sidewall faces and the n-type GaN surface.",
author = "Younghun Jung and Kim, {Ji Hyun} and Soohwan Jang and Baik, {Kwang Hyeon} and Seo, {Yong Gon} and Hwang, {Sung Min}",
year = "2010",
month = "4",
day = "26",
doi = "10.1364/OE.18.009728",
language = "English",
volume = "18",
pages = "9728--9732",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "9",

}

TY - JOUR

T1 - Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching

AU - Jung, Younghun

AU - Kim, Ji Hyun

AU - Jang, Soohwan

AU - Baik, Kwang Hyeon

AU - Seo, Yong Gon

AU - Hwang, Sung Min

PY - 2010/4/26

Y1 - 2010/4/26

N2 - The extraction efficiency of nonpolar a-plane (11-20) GaN LEDs on sapphire substrates has been enhanced by selectively etching the mesa sidewall faces and the n-type GaN surfaces with photoenhanced chemical wet etching. Submicron-sized trigonal prisms having prismatic planes of {1 -100} were clearly displayed on the n-type GaN surfaces as well as the sidewall face after 5 min etching at 60°C. The radiation patterns have shown that more light is extracted in all directions and the output powers of surface textured a-plane GaN LEDs have increased by 25% compared with control samples. PEC wet etching produced unique feature of etching morphology on the mesa sidewall faces and the n-type GaN surface.

AB - The extraction efficiency of nonpolar a-plane (11-20) GaN LEDs on sapphire substrates has been enhanced by selectively etching the mesa sidewall faces and the n-type GaN surfaces with photoenhanced chemical wet etching. Submicron-sized trigonal prisms having prismatic planes of {1 -100} were clearly displayed on the n-type GaN surfaces as well as the sidewall face after 5 min etching at 60°C. The radiation patterns have shown that more light is extracted in all directions and the output powers of surface textured a-plane GaN LEDs have increased by 25% compared with control samples. PEC wet etching produced unique feature of etching morphology on the mesa sidewall faces and the n-type GaN surface.

UR - http://www.scopus.com/inward/record.url?scp=77952031206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952031206&partnerID=8YFLogxK

U2 - 10.1364/OE.18.009728

DO - 10.1364/OE.18.009728

M3 - Article

VL - 18

SP - 9728

EP - 9732

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 9

ER -