Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

Hyun Gi Hong, Seok Soon Kim, Dong Yu Kim, Takhee Lee, June O. Song, J. H. Cho, C. Sone, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report on the enhancement of the light output of near-UV (298 nm) GaN-based light-emitting diodes (LEDs) by using nanopatterned indium tin oxide (ITO) p-type contact layers. One-dimensional (1D) and two-dimensional (2D) nanopatterns are defined using a TiO2 nano-mask, fabricated by means of a surface relief grating technique. The LEDs fabricated with the 1D and 2D nanopatterned p-type electrodes produce higher output powers by 33-48% (at 20 mA) as compared to those fabricated with the unpatterned contacts. The pattern-induced improvement of the output power is described in terms of the formation of the sidewalls of p-type electrodes.

Original languageEnglish
Pages (from-to)594-597
Number of pages4
JournalSemiconductor Science and Technology
Volume21
Issue number5
DOIs
Publication statusPublished - 2006 May 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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