Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

Hyun G. Hong, Seok Soon Kim, Dong Y. Kim, Takhee Lee, June O. Song, J. H. Cho, C. Sone, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report on the enhancement of the light output of near-UV (298 nm) GaN-based light-emitting diodes (LEDs) by using nanopatterned indium tin oxide (ITO) p-type contact layers. One-dimensional (1D) and two-dimensional (2D) nanopatterns are defined using a TiO2 nano-mask, fabricated by means of a surface relief grating technique. The LEDs fabricated with the 1D and 2D nanopatterned p-type electrodes produce higher output powers by 33-48% (at 20 mA) as compared to those fabricated with the unpatterned contacts. The pattern-induced improvement of the output power is described in terms of the formation of the sidewalls of p-type electrodes.

Original languageEnglish
Pages (from-to)594-597
Number of pages4
JournalSemiconductor Science and Technology
Volume21
Issue number5
DOIs
Publication statusPublished - 2006 May 1

Fingerprint

Tin oxides
Ultraviolet radiation
indium oxides
Indium
tin oxides
Light emitting diodes
Diodes
light emitting diodes
Electrodes
electrodes
output
Masks
masks
gratings
augmentation
indium tin oxide
titanium dioxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes. / Hong, Hyun G.; Kim, Seok Soon; Kim, Dong Y.; Lee, Takhee; Song, June O.; Cho, J. H.; Sone, C.; Park, Y.; Seong, Tae Yeon.

In: Semiconductor Science and Technology, Vol. 21, No. 5, 01.05.2006, p. 594-597.

Research output: Contribution to journalArticle

Hong, Hyun G. ; Kim, Seok Soon ; Kim, Dong Y. ; Lee, Takhee ; Song, June O. ; Cho, J. H. ; Sone, C. ; Park, Y. ; Seong, Tae Yeon. / Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes. In: Semiconductor Science and Technology. 2006 ; Vol. 21, No. 5. pp. 594-597.
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AU - Lee, Takhee

AU - Song, June O.

AU - Cho, J. H.

AU - Sone, C.

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