Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer

Lee Woon Jang, Jin Woo Ju, Dae Woo Jeon, Jae Woo Park, A. Y. Polyakov, Seung Jae Lee, Jong Hyeob Baek, Song Mei Lee, Yong Hoon Cho, In Hwan Lee

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19 Citations (Scopus)

Abstract

2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.

Original languageEnglish
Pages (from-to)6036-6041
Number of pages6
JournalOptics Express
Volume20
Issue number6
DOIs
Publication statusPublished - 2012 Mar 12

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Jang, L. W., Ju, J. W., Jeon, D. W., Park, J. W., Polyakov, A. Y., Lee, S. J., Baek, J. H., Lee, S. M., Cho, Y. H., & Lee, I. H. (2012). Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer. Optics Express, 20(6), 6036-6041. https://doi.org/10.1364/OE.20.006036