Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures

Lee Woon Jang, Jin Woo Ju, Ju Won Jeon, Dae Woo Jeon, Jung Hun Choi, Seung Jae Lee, Seong Ran Jeon, Jong Hyeob Baek, E. Sari, H. V. Demir, Hyung Do Yoon, Sung Min Hwang, In Hwan Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)


We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode structure, the p-GaN layer was roughened by inductive coupled plasma etching and the Ag nanostructures were formed on it. This structure showed a drastic enhancement in photoluminescence and electroluminescence intensity and the degree of enhancement was found to depend on the morphology of Ag nanostructures. From the time-resolved photoluminescence measurement a faster decay rate for the Ag-coated structure was observed. The calculated Purcell enhancement factor indicated that the improved luminescence intensity was attributed to the energy transfer from electron-hole pair recombination in the quantum well to electron vibrations of surface plasmon at the Ag-coated surface of the roughened p-GaN.

Original languageEnglish
Title of host publicationQuantum Sensing and Nanophotonic Devices VIII
Publication statusPublished - 2011
Externally publishedYes
EventQuantum Sensing and Nanophotonic Devices VIII - San Francisco, CA, United States
Duration: 2011 Jan 232011 Jan 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceQuantum Sensing and Nanophotonic Devices VIII
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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