Enhanced optical output performance in InGaN/GaN light-emitting diode embedded with SiO2 nanoparticles

Dae Woo Jeon, Lee Woon Jang, Han Su Cho, Kyeong Seob Kwon, Myeong Ji Dong, A. Y. Polyakov, Jin Woo Ju, Tae Hoon Chung, Jong Hyeob Baek, In-Hwan Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We demonstrated the InGaN/GaN-based light-emitting diodes (LEDs) with SiO2 nanoparticles embedded in nanopillar GaN template. With the SiO2 nanoparticles placed between the GaN nanopillars, subsequent overgrowth of GaN layer started only on the exposed tips of the nanopillars and rapidly switched to the lateral growth mode. This resulted in a high quality GaN layer "sitting" on the nanopillars and the layer of pores formed over the SiO2 nanoparticles. For multi-quantum-well LEDs grown on top of such template, ∼3 fold increase in optical output was observed compared to reference samples. The effect is attributed mainly to the improved light extraction efficiency due to additional scattering in the nanopillars-SiO2-pores portion of the structure, also to the increased internal quantum efficiency caused by a decreased dislocation density and relaxed strain due to the GaN nanopillars.

Original languageEnglish
Pages (from-to)21454-21459
Number of pages6
JournalOptics Express
Volume22
Issue number18
DOIs
Publication statusPublished - 2014 Sep 8
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Jeon, D. W., Jang, L. W., Cho, H. S., Kwon, K. S., Dong, M. J., Polyakov, A. Y., Ju, J. W., Chung, T. H., Baek, J. H., & Lee, I-H. (2014). Enhanced optical output performance in InGaN/GaN light-emitting diode embedded with SiO2 nanoparticles. Optics Express, 22(18), 21454-21459. https://doi.org/10.1364/OE.22.021454