Enhanced organic thin-film transistors with double polymer dielectric layer

J. H. Seo; J. H. Kwon; N. R. Kim; Y. H. Lee; B. K. Ju

Enhanced organic thin-film transistors with double polymer dielectric layer

J. H. Seo, J. H. Kwon, N. R. Kim, Y. H. Lee, B. K. Ju

Research output: Contribution to conference › Paper › peer-review

Abstract

Enhanced organic thin-film transistors (OTFTs) using double polymer dielectric layer (PVA+PVP, 370nm) for bendable device is fabricated by spin-coating and photolithograph patterning. These OTFTs have a merit to adapt a soluble process with stable, high performed dielectric layer so that achieve good characteristics. There measured ε_r = 8.4 of PVA+PVP double layer, I_D=6.45μA at V_G = 25V, l_D=3.3μA at V_G=15V of output current, 2.64×10³ of on/off ratio and 0.011 cm²/Vs of mobility, respectively.

Original language	English
Pages	793-796
Number of pages	4
Publication status	Published - 2006
Event	13th International Display Workshops, IDW '06 - Otsu, Japan Duration: 2006 Dec 6 → 2006 Dec 6

Other

Other	13th International Display Workshops, IDW '06
Country/Territory	Japan
City	Otsu
Period	06/12/6 → 06/12/6

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging
Atomic and Molecular Physics, and Optics

Cite this

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title = "Enhanced organic thin-film transistors with double polymer dielectric layer",

abstract = "Enhanced organic thin-film transistors (OTFTs) using double polymer dielectric layer (PVA+PVP, 370nm) for bendable device is fabricated by spin-coating and photolithograph patterning. These OTFTs have a merit to adapt a soluble process with stable, high performed dielectric layer so that achieve good characteristics. There measured εr = 8.4 of PVA+PVP double layer, ID=6.45μA at VG = 25V, lD=3.3μA at VG=15V of output current, 2.64×103 of on/off ratio and 0.011 cm2/Vs of mobility, respectively.",

author = "Seo, {J. H.} and Kwon, {J. H.} and Kim, {N. R.} and Lee, {Y. H.} and Ju, {B. K.}",

year = "2006",

language = "English",

pages = "793--796",

note = "13th International Display Workshops, IDW '06 ; Conference date: 06-12-2006 Through 06-12-2006",

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TY - CONF

T1 - Enhanced organic thin-film transistors with double polymer dielectric layer

AU - Seo, J. H.

AU - Kwon, J. H.

AU - Kim, N. R.

AU - Lee, Y. H.

AU - Ju, B. K.

PY - 2006

Y1 - 2006

N2 - Enhanced organic thin-film transistors (OTFTs) using double polymer dielectric layer (PVA+PVP, 370nm) for bendable device is fabricated by spin-coating and photolithograph patterning. These OTFTs have a merit to adapt a soluble process with stable, high performed dielectric layer so that achieve good characteristics. There measured εr = 8.4 of PVA+PVP double layer, ID=6.45μA at VG = 25V, lD=3.3μA at VG=15V of output current, 2.64×103 of on/off ratio and 0.011 cm2/Vs of mobility, respectively.

AB - Enhanced organic thin-film transistors (OTFTs) using double polymer dielectric layer (PVA+PVP, 370nm) for bendable device is fabricated by spin-coating and photolithograph patterning. These OTFTs have a merit to adapt a soluble process with stable, high performed dielectric layer so that achieve good characteristics. There measured εr = 8.4 of PVA+PVP double layer, ID=6.45μA at VG = 25V, lD=3.3μA at VG=15V of output current, 2.64×103 of on/off ratio and 0.011 cm2/Vs of mobility, respectively.

UR - http://www.scopus.com/inward/record.url?scp=57649155543&partnerID=8YFLogxK

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M3 - Paper

AN - SCOPUS:57649155543

SP - 793

EP - 796

T2 - 13th International Display Workshops, IDW '06

Y2 - 6 December 2006 through 6 December 2006

ER -

Enhanced organic thin-film transistors with double polymer dielectric layer

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ASJC Scopus subject areas

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