We have investigated the effects of an AlxGa1-xAs cladding layer on the performance of In0.2Ga0.8As/GaAs single quantum well (SQW) laser diodes (LDs). Two types of SQW-LDs with different cladding layers are grown by molecular beam epitaxy. One has 1-mm-thick Al0.3Ga0.3As cladding layers for both the top and the bottom cladding layers and the other has 1-mm-thick Al 0.7Ga0.3As cladding layers. The SQW-LDs are fabricated to a ridge waveguide structure with a 50-mm-wide, 750-mm-long cavity. Under a pulsed operation, the threshold current density (Jth) and the characteristic temperature (T0) are 770 A/cm2 and 33.5 K for a SQW-LD with Al0.3Ga0.7As cladding and 300 A/cm 2 and 70 K for one with Al0.7Ga0.3As cladding, respectively, at room-temperature (RT). This result can be explained by the increased optical confinement and the improved carrier confinement caused by introducing a high Al content into AlxGa1-xAs cladding layer.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2006 Sep 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)