Enhanced performance of an InGaAs/GaAs single quantum well laser diode by introducing a high Al-content AlxGa1-xAs cladding layer

Kwang Woong Kim, Jin Dong Song, Won Jun Choi, Jung Il Lee, Jung ho Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have investigated the effects of an AlxGa1-xAs cladding layer on the performance of In0.2Ga0.8As/GaAs single quantum well (SQW) laser diodes (LDs). Two types of SQW-LDs with different cladding layers are grown by molecular beam epitaxy. One has 1-mm-thick Al0.3Ga0.3As cladding layers for both the top and the bottom cladding layers and the other has 1-mm-thick Al 0.7Ga0.3As cladding layers. The SQW-LDs are fabricated to a ridge waveguide structure with a 50-mm-wide, 750-mm-long cavity. Under a pulsed operation, the threshold current density (Jth) and the characteristic temperature (T0) are 770 A/cm2 and 33.5 K for a SQW-LD with Al0.3Ga0.7As cladding and 300 A/cm 2 and 70 K for one with Al0.7Ga0.3As cladding, respectively, at room-temperature (RT). This result can be explained by the increased optical confinement and the improved carrier confinement caused by introducing a high Al content into AlxGa1-xAs cladding layer.

Original languageEnglish
Pages (from-to)1169-1172
Number of pages4
JournalJournal of the Korean Physical Society
Volume49
Issue number3
Publication statusPublished - 2006 Sep 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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