Abstract
Flexible hydrogenated nanocrystalline (nc-Si:H) thin-film solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD), and the effect of highly crystalline intrinsic Si seed layers at the initial growth stage of i nc-Si:H absorbers on their structural and electrical properties and on the performance of solar cells was investigated. The crystallization of i nc-Si:H absorbers was significantly enforced by the introduction of highly crystalline seed layers, resulting in the reduction of defect-dense a-Si:H grain boundary and incubation layer thickness. The open circuit voltage of the nc-Si:H solar cells with the seed layers was improved by the decrease of charged defect density in the defect-rich amorphous region.
| Original language | English |
|---|---|
| Pages (from-to) | 7891-7894 |
| Number of pages | 4 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 13 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2013 Dec 1 |
| Externally published | Yes |
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Keywords
- Crystallization
- Defect
- Seed Layer
- Silicon Thin-Film Solar Cell
ASJC Scopus subject areas
- Condensed Matter Physics
- Chemistry(all)
- Materials Science(all)
- Bioengineering
- Biomedical Engineering
Cite this
Enhanced performance of flexible nanocrystalline silicon thin-film solar cells using seed layers with high hydrogen dilution. / Lee, Ji Eun; Kim, Donghwan; Yoon, Kyung Hoon; Cho, Jun Sik.
In: Journal of Nanoscience and Nanotechnology, Vol. 13, No. 12, 01.12.2013, p. 7891-7894.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Enhanced performance of flexible nanocrystalline silicon thin-film solar cells using seed layers with high hydrogen dilution
AU - Lee, Ji Eun
AU - Kim, Donghwan
AU - Yoon, Kyung Hoon
AU - Cho, Jun Sik
PY - 2013/12/1
Y1 - 2013/12/1
N2 - Flexible hydrogenated nanocrystalline (nc-Si:H) thin-film solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD), and the effect of highly crystalline intrinsic Si seed layers at the initial growth stage of i nc-Si:H absorbers on their structural and electrical properties and on the performance of solar cells was investigated. The crystallization of i nc-Si:H absorbers was significantly enforced by the introduction of highly crystalline seed layers, resulting in the reduction of defect-dense a-Si:H grain boundary and incubation layer thickness. The open circuit voltage of the nc-Si:H solar cells with the seed layers was improved by the decrease of charged defect density in the defect-rich amorphous region.
AB - Flexible hydrogenated nanocrystalline (nc-Si:H) thin-film solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD), and the effect of highly crystalline intrinsic Si seed layers at the initial growth stage of i nc-Si:H absorbers on their structural and electrical properties and on the performance of solar cells was investigated. The crystallization of i nc-Si:H absorbers was significantly enforced by the introduction of highly crystalline seed layers, resulting in the reduction of defect-dense a-Si:H grain boundary and incubation layer thickness. The open circuit voltage of the nc-Si:H solar cells with the seed layers was improved by the decrease of charged defect density in the defect-rich amorphous region.
KW - Crystallization
KW - Defect
KW - Seed Layer
KW - Silicon Thin-Film Solar Cell
UR - http://www.scopus.com/inward/record.url?scp=84892719280&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84892719280&partnerID=8YFLogxK
U2 - 10.1166/jnn.2013.8149
DO - 10.1166/jnn.2013.8149
M3 - Article
AN - SCOPUS:84892719280
VL - 13
SP - 7891
EP - 7894
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 12
ER -