Enhanced spin–orbit torque efficiency with low resistivity in perpendicularly magnetized heterostructures consisting of Si-alloyed β-W layers

Taehyun Kim, Quynh Anh T. Nguyen, Gyu Won Kim, Min Hyeok Lee, Seok In Yoon, Sonny H. Rhim, Young Keun Kim

Research output: Contribution to journalArticlepeer-review

Abstract

Spin-orbit torque (SOT) based magnetization switching is of current technological interest to demonstrate its utilization in nonvolatile embedded memory and logic devices. These devices require perpendicular magnetic anisotropy (PMA) for high bit density, significant SOT efficiency to warrant low power consumption, and external field-free magnetization switching. Above all, materials associated with these devices must be semiconductor fabrication friendly. However, only a few materials and their heterostructures previously explored fulfill the requirements. Here, we propose a W–Si alloy, a widely used material in semiconductor devices, as the spin current-generating layer. First, we investigate the spin Hall conductivity of W–Si alloys by adding Si atoms to the β-W matrix using the first-principles calculations. Then, experimentally, we confirm that the heterostructure consisting of W-Si (4 at%)/CoFeB exhibits PMA, a high damping-like SOT efficiency (∼0.58), and low longitudinal resistivity (∼135 μΩ cm). Furthermore, we estimate ten times smaller write power consumption than the heterostructure based on the pristine β-W. The proposed W–Si/CoFeB heterostructures can withstand post-deposition heat treatment up to 500 °C.

Original languageEnglish
Article number155352
JournalApplied Surface Science
Volume609
DOIs
Publication statusPublished - 2023 Jan 30

Keywords

  • First-principles calculation
  • Longitudinal resistivity
  • Microstructure
  • Spin–orbit torque
  • W-Si alloy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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