Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer

Jae Seong Park, Joon Woo Jeon, Chang Hyung Lee, Chang Hoon Choi, Sungho Jin, Tae Yeon Seong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO 2. The Ag/Ru contacts exhibit specific contact resistance of 8.1 × 10 -5 Ω cm 2 and reflectance of ∼89% at a wavelength of 450 nm when annealed at 500°C for 1 min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500°C-annealed Ag/Ru contacts give a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the 500°C-annealed Ag only contacts. LEDs with the 500°C-annealed Ag/Ru contacts show 25% higher output power (at 20 mA) than LEDs with the 500°C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts.

Original languageEnglish
Pages (from-to)357-363
Number of pages7
JournalSuperlattices and Microstructures
Volume52
Issue number3
DOIs
Publication statusPublished - 2012 Sep 1

Fingerprint

reflectors
Light emitting diodes
Thermodynamic stability
thermal stability
light emitting diodes
Contact resistance
Photoelectron spectroscopy
X ray spectroscopy
agglomeration
contact resistance
photoelectric emission
Agglomeration
examination
injection
reflectance
Wavelength
output
Electric potential
electric potential
wavelengths

Keywords

  • A Ru capping layer
  • Ag ohmic reflector
  • GaN
  • Light-emitting diode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer. / Park, Jae Seong; Jeon, Joon Woo; Lee, Chang Hyung; Choi, Chang Hoon; Jin, Sungho; Seong, Tae Yeon.

In: Superlattices and Microstructures, Vol. 52, No. 3, 01.09.2012, p. 357-363.

Research output: Contribution to journalArticle

Park, Jae Seong ; Jeon, Joon Woo ; Lee, Chang Hyung ; Choi, Chang Hoon ; Jin, Sungho ; Seong, Tae Yeon. / Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer. In: Superlattices and Microstructures. 2012 ; Vol. 52, No. 3. pp. 357-363.
@article{c62ddb0d40d24e5f8589b6181a8041c8,
title = "Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer",
abstract = "A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO 2. The Ag/Ru contacts exhibit specific contact resistance of 8.1 × 10 -5 Ω cm 2 and reflectance of ∼89{\%} at a wavelength of 450 nm when annealed at 500°C for 1 min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500°C-annealed Ag/Ru contacts give a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the 500°C-annealed Ag only contacts. LEDs with the 500°C-annealed Ag/Ru contacts show 25{\%} higher output power (at 20 mA) than LEDs with the 500°C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts.",
keywords = "A Ru capping layer, Ag ohmic reflector, GaN, Light-emitting diode",
author = "Park, {Jae Seong} and Jeon, {Joon Woo} and Lee, {Chang Hyung} and Choi, {Chang Hoon} and Sungho Jin and Seong, {Tae Yeon}",
year = "2012",
month = "9",
day = "1",
doi = "10.1016/j.spmi.2012.05.021",
language = "English",
volume = "52",
pages = "357--363",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "3",

}

TY - JOUR

T1 - Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer

AU - Park, Jae Seong

AU - Jeon, Joon Woo

AU - Lee, Chang Hyung

AU - Choi, Chang Hoon

AU - Jin, Sungho

AU - Seong, Tae Yeon

PY - 2012/9/1

Y1 - 2012/9/1

N2 - A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO 2. The Ag/Ru contacts exhibit specific contact resistance of 8.1 × 10 -5 Ω cm 2 and reflectance of ∼89% at a wavelength of 450 nm when annealed at 500°C for 1 min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500°C-annealed Ag/Ru contacts give a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the 500°C-annealed Ag only contacts. LEDs with the 500°C-annealed Ag/Ru contacts show 25% higher output power (at 20 mA) than LEDs with the 500°C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts.

AB - A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO 2. The Ag/Ru contacts exhibit specific contact resistance of 8.1 × 10 -5 Ω cm 2 and reflectance of ∼89% at a wavelength of 450 nm when annealed at 500°C for 1 min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500°C-annealed Ag/Ru contacts give a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the 500°C-annealed Ag only contacts. LEDs with the 500°C-annealed Ag/Ru contacts show 25% higher output power (at 20 mA) than LEDs with the 500°C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts.

KW - A Ru capping layer

KW - Ag ohmic reflector

KW - GaN

KW - Light-emitting diode

UR - http://www.scopus.com/inward/record.url?scp=84862750361&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862750361&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2012.05.021

DO - 10.1016/j.spmi.2012.05.021

M3 - Article

AN - SCOPUS:84862750361

VL - 52

SP - 357

EP - 363

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 3

ER -