Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Ji Hyun Kim, B. Luo, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. V. Osinsky, P. E. Norris

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias.

Original languageEnglish
Pages (from-to)5203-5207
Number of pages5
JournalJournal of Applied Physics
Volume91
Issue number8
DOIs
Publication statusPublished - 2002 Apr 15
Externally publishedYes

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heterojunctions
diodes
quantum wells
injection
annealing
metalorganic chemical vapor deposition
space charge
sapphire
light emitting diodes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kim, J. H., Luo, B., Mehandru, R., ... Norris, P. E. (2002). Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing. Journal of Applied Physics, 91(8), 5203-5207. https://doi.org/10.1063/1.1465119

Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kim, Ji Hyun; Luo, B.; Mehandru, R.; Ren, F.; Lee, K. P.; Pearton, S. J.; Osinsky, A. V.; Norris, P. E.

In: Journal of Applied Physics, Vol. 91, No. 8, 15.04.2002, p. 5203-5207.

Research output: Contribution to journalArticle

Polyakov, AY, Smirnov, NB, Govorkov, AV, Kim, JH, Luo, B, Mehandru, R, Ren, F, Lee, KP, Pearton, SJ, Osinsky, AV & Norris, PE 2002, 'Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing', Journal of Applied Physics, vol. 91, no. 8, pp. 5203-5207. https://doi.org/10.1063/1.1465119
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Kim, Ji Hyun ; Luo, B. ; Mehandru, R. ; Ren, F. ; Lee, K. P. ; Pearton, S. J. ; Osinsky, A. V. ; Norris, P. E. / Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing. In: Journal of Applied Physics. 2002 ; Vol. 91, No. 8. pp. 5203-5207.
@article{b043d811cbe84c80a3e2b828bee3763a,
title = "Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing",
abstract = "Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias.",
author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kim, {Ji Hyun} and B. Luo and R. Mehandru and F. Ren and Lee, {K. P.} and Pearton, {S. J.} and Osinsky, {A. V.} and Norris, {P. E.}",
year = "2002",
month = "4",
day = "15",
doi = "10.1063/1.1465119",
language = "English",
volume = "91",
pages = "5203--5207",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kim, Ji Hyun

AU - Luo, B.

AU - Mehandru, R.

AU - Ren, F.

AU - Lee, K. P.

AU - Pearton, S. J.

AU - Osinsky, A. V.

AU - Norris, P. E.

PY - 2002/4/15

Y1 - 2002/4/15

N2 - Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias.

AB - Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias.

UR - http://www.scopus.com/inward/record.url?scp=0037091886&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037091886&partnerID=8YFLogxK

U2 - 10.1063/1.1465119

DO - 10.1063/1.1465119

M3 - Article

AN - SCOPUS:0037091886

VL - 91

SP - 5203

EP - 5207

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -