Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Ji Hyun Kim, B. Luo, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. V. Osinsky, P. E. Norris

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41 Citations (Scopus)

Abstract

Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias.

Original languageEnglish
Pages (from-to)5203-5207
Number of pages5
JournalJournal of Applied Physics
Volume91
Issue number8
DOIs
Publication statusPublished - 2002 Apr 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kim, J. H., Luo, B., Mehandru, R., Ren, F., Lee, K. P., Pearton, S. J., Osinsky, A. V., & Norris, P. E. (2002). Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing. Journal of Applied Physics, 91(8), 5203-5207. https://doi.org/10.1063/1.1465119