Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching

D. Y. Jeon, K. H. Kim, S. J. Park, J. H. Huh, H. Y. Kim, C. Y. Yim, Gyu-Tae Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In characterizing the electrical properties of individual NWs (nanowires), the amorphous oxide layer on the surface of NWs is known to limit the electrical conductivity owing to the contact barriers between metal electrodes and NWs. To remove the native oxide layer, a systematic reactive ion etching (RIE) was performed, resulting in a gradual decrease of the diameters of NWs. Voltage-current characteristics of the GaN NW devices treated by tuning the RIE process were improved as reflected by a 1000 times increase in conductance, which was in turn attributed to the removal of the thick (d∼3.5 nm) contact barrier formed by the native oxide layer.

Original languageEnglish
Article number023108
JournalApplied Physics Letters
Volume89
Issue number2
DOIs
Publication statusPublished - 2006 Jul 24

Fingerprint

nanowires
etching
electric potential
ions
oxides
electrical properties
tuning
electrical resistivity
electrodes
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching. / Jeon, D. Y.; Kim, K. H.; Park, S. J.; Huh, J. H.; Kim, H. Y.; Yim, C. Y.; Kim, Gyu-Tae.

In: Applied Physics Letters, Vol. 89, No. 2, 023108, 24.07.2006.

Research output: Contribution to journalArticle

Jeon, D. Y. ; Kim, K. H. ; Park, S. J. ; Huh, J. H. ; Kim, H. Y. ; Yim, C. Y. ; Kim, Gyu-Tae. / Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching. In: Applied Physics Letters. 2006 ; Vol. 89, No. 2.
@article{9558c8a31d6442a6823148721f4cd5cd,
title = "Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching",
abstract = "In characterizing the electrical properties of individual NWs (nanowires), the amorphous oxide layer on the surface of NWs is known to limit the electrical conductivity owing to the contact barriers between metal electrodes and NWs. To remove the native oxide layer, a systematic reactive ion etching (RIE) was performed, resulting in a gradual decrease of the diameters of NWs. Voltage-current characteristics of the GaN NW devices treated by tuning the RIE process were improved as reflected by a 1000 times increase in conductance, which was in turn attributed to the removal of the thick (d∼3.5 nm) contact barrier formed by the native oxide layer.",
author = "Jeon, {D. Y.} and Kim, {K. H.} and Park, {S. J.} and Huh, {J. H.} and Kim, {H. Y.} and Yim, {C. Y.} and Gyu-Tae Kim",
year = "2006",
month = "7",
day = "24",
doi = "10.1063/1.2220538",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching

AU - Jeon, D. Y.

AU - Kim, K. H.

AU - Park, S. J.

AU - Huh, J. H.

AU - Kim, H. Y.

AU - Yim, C. Y.

AU - Kim, Gyu-Tae

PY - 2006/7/24

Y1 - 2006/7/24

N2 - In characterizing the electrical properties of individual NWs (nanowires), the amorphous oxide layer on the surface of NWs is known to limit the electrical conductivity owing to the contact barriers between metal electrodes and NWs. To remove the native oxide layer, a systematic reactive ion etching (RIE) was performed, resulting in a gradual decrease of the diameters of NWs. Voltage-current characteristics of the GaN NW devices treated by tuning the RIE process were improved as reflected by a 1000 times increase in conductance, which was in turn attributed to the removal of the thick (d∼3.5 nm) contact barrier formed by the native oxide layer.

AB - In characterizing the electrical properties of individual NWs (nanowires), the amorphous oxide layer on the surface of NWs is known to limit the electrical conductivity owing to the contact barriers between metal electrodes and NWs. To remove the native oxide layer, a systematic reactive ion etching (RIE) was performed, resulting in a gradual decrease of the diameters of NWs. Voltage-current characteristics of the GaN NW devices treated by tuning the RIE process were improved as reflected by a 1000 times increase in conductance, which was in turn attributed to the removal of the thick (d∼3.5 nm) contact barrier formed by the native oxide layer.

UR - http://www.scopus.com/inward/record.url?scp=33746094287&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746094287&partnerID=8YFLogxK

U2 - 10.1063/1.2220538

DO - 10.1063/1.2220538

M3 - Article

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 023108

ER -