Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching

D. Y. Jeon; K. H. Kim; S. J. Park; J. H. Huh; H. Y. Kim; C. Y. Yim; G. T. Kim

doi:10.1063/1.2220538

Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching

D. Y. Jeon, K. H. Kim, S. J. Park, J. H. Huh, H. Y. Kim, C. Y. Yim, G. T. Kim

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In characterizing the electrical properties of individual NWs (nanowires), the amorphous oxide layer on the surface of NWs is known to limit the electrical conductivity owing to the contact barriers between metal electrodes and NWs. To remove the native oxide layer, a systematic reactive ion etching (RIE) was performed, resulting in a gradual decrease of the diameters of NWs. Voltage-current characteristics of the GaN NW devices treated by tuning the RIE process were improved as reflected by a 1000 times increase in conductance, which was in turn attributed to the removal of the thick (d∼3.5 nm) contact barrier formed by the native oxide layer.

Original language	English
Article number	023108
Journal	Applied Physics Letters
Volume	89
Issue number	2
DOIs	https://doi.org/10.1063/1.2220538
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2220538

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title = "Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching",

abstract = "In characterizing the electrical properties of individual NWs (nanowires), the amorphous oxide layer on the surface of NWs is known to limit the electrical conductivity owing to the contact barriers between metal electrodes and NWs. To remove the native oxide layer, a systematic reactive ion etching (RIE) was performed, resulting in a gradual decrease of the diameters of NWs. Voltage-current characteristics of the GaN NW devices treated by tuning the RIE process were improved as reflected by a 1000 times increase in conductance, which was in turn attributed to the removal of the thick (d∼3.5 nm) contact barrier formed by the native oxide layer.",

author = "Jeon, {D. Y.} and Kim, {K. H.} and Park, {S. J.} and Huh, {J. H.} and Kim, {H. Y.} and Yim, {C. Y.} and Kim, {G. T.}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2003-042-C20017). The authors are thankful to Dr. Jong Soo Lee for the supply of the GaN NW samples. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2006",

doi = "10.1063/1.2220538",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

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T1 - Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching

AU - Jeon, D. Y.

AU - Kim, K. H.

AU - Park, S. J.

AU - Huh, J. H.

AU - Kim, H. Y.

AU - Yim, C. Y.

AU - Kim, G. T.

N1 - Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2003-042-C20017). The authors are thankful to Dr. Jong Soo Lee for the supply of the GaN NW samples. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006

Y1 - 2006

N2 - In characterizing the electrical properties of individual NWs (nanowires), the amorphous oxide layer on the surface of NWs is known to limit the electrical conductivity owing to the contact barriers between metal electrodes and NWs. To remove the native oxide layer, a systematic reactive ion etching (RIE) was performed, resulting in a gradual decrease of the diameters of NWs. Voltage-current characteristics of the GaN NW devices treated by tuning the RIE process were improved as reflected by a 1000 times increase in conductance, which was in turn attributed to the removal of the thick (d∼3.5 nm) contact barrier formed by the native oxide layer.

AB - In characterizing the electrical properties of individual NWs (nanowires), the amorphous oxide layer on the surface of NWs is known to limit the electrical conductivity owing to the contact barriers between metal electrodes and NWs. To remove the native oxide layer, a systematic reactive ion etching (RIE) was performed, resulting in a gradual decrease of the diameters of NWs. Voltage-current characteristics of the GaN NW devices treated by tuning the RIE process were improved as reflected by a 1000 times increase in conductance, which was in turn attributed to the removal of the thick (d∼3.5 nm) contact barrier formed by the native oxide layer.

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JF - Applied Physics Letters

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Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching

Abstract

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