Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth

R. T. Lee, C. M. Fetzer, S. W. Jun, D. C. Chapman, J. K. Shurtleff, G. B. Stringfellow, Y. W. Ok, Tae Yeon Seong

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The use of surfactants in semiconductors during organometallic vapor phase epitaxy (OMVPE) is a powerful and exciting tool for controlling the properties of epilayers. The effects of the isoelectronic surfactants Sb and Bi have been systematically studied for GaInP alloys grown lattice-matched to GaAs substrates by OMVPE. Addition of small concentrations of either Sb or Bi leads to the elimination of the CuPt-B ordering observed in undoped layers. At high Sb concentrations, additional changes in the structure and optical properties are observed. The layers spontaneously form a structure with a lateral compositional modulation in the [110] direction. Surface undulations are clearly seen by atomic force microscopy (AFM) for the layers with compositional modulation. The low temperature photoluminescence (PL) peak energy is observed to decrease with increasing compositional modulation. The PL emission is strongly anisotropic, with a high intensity in the [1̄10] direction which is the reverse of the pola rization observed for CuPt ordered GaInP layers. Compositional modulation and surface undulation are found to be strongly affected by the growth rate. The amplitude of the compositional modulation in GaInP layers grown with either surfactant is significantly increased for decreased growth rates. The process controlling the amplitude appears to be kinetically limited. It is likely that adding the surfactant Sb or Bi increases the ad-atom surface diffusion coefficients which acts to enhance the extent of compositional modulation in GaInP especially when grown at low rates.

Original languageEnglish
Pages (from-to)490-502
Number of pages13
JournalJournal of Crystal Growth
Volume233
Issue number3
DOIs
Publication statusPublished - 2001 Dec 1
Externally publishedYes

Fingerprint

Vapor phase epitaxy
Epilayers
Organometallics
Surface-Active Agents
vapor phase epitaxy
Surface active agents
surfactants
Modulation
modulation
augmentation
Photoluminescence
photoluminescence
Surface diffusion
surface diffusion
elimination
Atomic force microscopy
diffusion coefficient
Optical properties
atomic force microscopy
Semiconductor materials

Keywords

  • A1. low dimensional structures
  • A1. surface processes
  • A1. surface structure
  • A3. organometallic vapor phase epitaxy
  • B2. semiconducting indium gallium phosphide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth. / Lee, R. T.; Fetzer, C. M.; Jun, S. W.; Chapman, D. C.; Shurtleff, J. K.; Stringfellow, G. B.; Ok, Y. W.; Seong, Tae Yeon.

In: Journal of Crystal Growth, Vol. 233, No. 3, 01.12.2001, p. 490-502.

Research output: Contribution to journalArticle

Lee, R. T. ; Fetzer, C. M. ; Jun, S. W. ; Chapman, D. C. ; Shurtleff, J. K. ; Stringfellow, G. B. ; Ok, Y. W. ; Seong, Tae Yeon. / Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth. In: Journal of Crystal Growth. 2001 ; Vol. 233, No. 3. pp. 490-502.
@article{c8cc7736ef8a4bcc931114036b09f66d,
title = "Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth",
abstract = "The use of surfactants in semiconductors during organometallic vapor phase epitaxy (OMVPE) is a powerful and exciting tool for controlling the properties of epilayers. The effects of the isoelectronic surfactants Sb and Bi have been systematically studied for GaInP alloys grown lattice-matched to GaAs substrates by OMVPE. Addition of small concentrations of either Sb or Bi leads to the elimination of the CuPt-B ordering observed in undoped layers. At high Sb concentrations, additional changes in the structure and optical properties are observed. The layers spontaneously form a structure with a lateral compositional modulation in the [110] direction. Surface undulations are clearly seen by atomic force microscopy (AFM) for the layers with compositional modulation. The low temperature photoluminescence (PL) peak energy is observed to decrease with increasing compositional modulation. The PL emission is strongly anisotropic, with a high intensity in the [1̄10] direction which is the reverse of the pola rization observed for CuPt ordered GaInP layers. Compositional modulation and surface undulation are found to be strongly affected by the growth rate. The amplitude of the compositional modulation in GaInP layers grown with either surfactant is significantly increased for decreased growth rates. The process controlling the amplitude appears to be kinetically limited. It is likely that adding the surfactant Sb or Bi increases the ad-atom surface diffusion coefficients which acts to enhance the extent of compositional modulation in GaInP especially when grown at low rates.",
keywords = "A1. low dimensional structures, A1. surface processes, A1. surface structure, A3. organometallic vapor phase epitaxy, B2. semiconducting indium gallium phosphide",
author = "Lee, {R. T.} and Fetzer, {C. M.} and Jun, {S. W.} and Chapman, {D. C.} and Shurtleff, {J. K.} and Stringfellow, {G. B.} and Ok, {Y. W.} and Seong, {Tae Yeon}",
year = "2001",
month = "12",
day = "1",
doi = "10.1016/S0022-0248(01)01595-0",
language = "English",
volume = "233",
pages = "490--502",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth

AU - Lee, R. T.

AU - Fetzer, C. M.

AU - Jun, S. W.

AU - Chapman, D. C.

AU - Shurtleff, J. K.

AU - Stringfellow, G. B.

AU - Ok, Y. W.

AU - Seong, Tae Yeon

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The use of surfactants in semiconductors during organometallic vapor phase epitaxy (OMVPE) is a powerful and exciting tool for controlling the properties of epilayers. The effects of the isoelectronic surfactants Sb and Bi have been systematically studied for GaInP alloys grown lattice-matched to GaAs substrates by OMVPE. Addition of small concentrations of either Sb or Bi leads to the elimination of the CuPt-B ordering observed in undoped layers. At high Sb concentrations, additional changes in the structure and optical properties are observed. The layers spontaneously form a structure with a lateral compositional modulation in the [110] direction. Surface undulations are clearly seen by atomic force microscopy (AFM) for the layers with compositional modulation. The low temperature photoluminescence (PL) peak energy is observed to decrease with increasing compositional modulation. The PL emission is strongly anisotropic, with a high intensity in the [1̄10] direction which is the reverse of the pola rization observed for CuPt ordered GaInP layers. Compositional modulation and surface undulation are found to be strongly affected by the growth rate. The amplitude of the compositional modulation in GaInP layers grown with either surfactant is significantly increased for decreased growth rates. The process controlling the amplitude appears to be kinetically limited. It is likely that adding the surfactant Sb or Bi increases the ad-atom surface diffusion coefficients which acts to enhance the extent of compositional modulation in GaInP especially when grown at low rates.

AB - The use of surfactants in semiconductors during organometallic vapor phase epitaxy (OMVPE) is a powerful and exciting tool for controlling the properties of epilayers. The effects of the isoelectronic surfactants Sb and Bi have been systematically studied for GaInP alloys grown lattice-matched to GaAs substrates by OMVPE. Addition of small concentrations of either Sb or Bi leads to the elimination of the CuPt-B ordering observed in undoped layers. At high Sb concentrations, additional changes in the structure and optical properties are observed. The layers spontaneously form a structure with a lateral compositional modulation in the [110] direction. Surface undulations are clearly seen by atomic force microscopy (AFM) for the layers with compositional modulation. The low temperature photoluminescence (PL) peak energy is observed to decrease with increasing compositional modulation. The PL emission is strongly anisotropic, with a high intensity in the [1̄10] direction which is the reverse of the pola rization observed for CuPt ordered GaInP layers. Compositional modulation and surface undulation are found to be strongly affected by the growth rate. The amplitude of the compositional modulation in GaInP layers grown with either surfactant is significantly increased for decreased growth rates. The process controlling the amplitude appears to be kinetically limited. It is likely that adding the surfactant Sb or Bi increases the ad-atom surface diffusion coefficients which acts to enhance the extent of compositional modulation in GaInP especially when grown at low rates.

KW - A1. low dimensional structures

KW - A1. surface processes

KW - A1. surface structure

KW - A3. organometallic vapor phase epitaxy

KW - B2. semiconducting indium gallium phosphide

UR - http://www.scopus.com/inward/record.url?scp=0035546562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035546562&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)01595-0

DO - 10.1016/S0022-0248(01)01595-0

M3 - Article

AN - SCOPUS:0035546562

VL - 233

SP - 490

EP - 502

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3

ER -