Enhancement of electrical and optical properties of silicon quantum dot light-emitting diodes with ZnO doping layer

Baek Hyun Kim, Robert F. Davis, Chang Hee Cho, Seong Ju Park, Chul Huh, Gun Yong Sung

Research output: Contribution to journalArticle

Abstract

We have investigated the effect of a ZnO doping layer on a silicon quantum dot (Si QD) light-emitting diode (LED). A highly doped ZnO layer was grown on a Si QD layer at room temperature using a radio-frequency sputtering. The power efficiency of Si QD LED containing the ZnO layer were greatly improved by 226% due to an increase in the electron injection through the highly doped ZnO layer into Si QDs embedded in the silicon nitride film and the high transparency of the ZnO layer.

Original languageEnglish
Pages (from-to)1050041-1050043
Number of pages3
JournalJapanese Journal of Applied Physics
Volume48
Issue number10 Part 1
DOIs
Publication statusPublished - 2009 Dec 1
Externally publishedYes

Fingerprint

Semiconductor quantum dots
Light emitting diodes
Electric properties
light emitting diodes
Optical properties
electrical properties
quantum dots
Doping (additives)
optical properties
Silicon
augmentation
silicon
Electron injection
Silicon nitride
Transparency
Sputtering
power efficiency
silicon nitrides
radio frequencies
sputtering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Enhancement of electrical and optical properties of silicon quantum dot light-emitting diodes with ZnO doping layer. / Kim, Baek Hyun; Davis, Robert F.; Cho, Chang Hee; Park, Seong Ju; Huh, Chul; Sung, Gun Yong.

In: Japanese Journal of Applied Physics, Vol. 48, No. 10 Part 1, 01.12.2009, p. 1050041-1050043.

Research output: Contribution to journalArticle

Kim, Baek Hyun ; Davis, Robert F. ; Cho, Chang Hee ; Park, Seong Ju ; Huh, Chul ; Sung, Gun Yong. / Enhancement of electrical and optical properties of silicon quantum dot light-emitting diodes with ZnO doping layer. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 10 Part 1. pp. 1050041-1050043.
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