Enhancement of electron emission efficiency and stability of molybdenum field emitter array by diamond-like carbon coating

J. H. Jung; B. K. Ju; Y. H. Lee; M. H. Oh; J. Jang

Enhancement of electron emission efficiency and stability of molybdenum field emitter array by diamond-like carbon coating

J. H. Jung, B. K. Ju, Y. H. Lee, M. H. Oh, J. Jang

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

We have studied the enhancement of electron emission by diamond-like carbon (DLC) coating on Mo field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The turn-on voltage was lowered from 55V to 30V by 20 nm DLC coating and maximum emission current was increased from 166μA to 831μA. Also the gate voltage required to get the anode current of 0.1(μA/emitter) decreases from 77V to 48V. Furthermore, the emission current from DLC coated Mo FEAs is more stable than that of non-coated Mo FEAs.

Original language	English
Pages (from-to)	293-296
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1996
Event	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1996 Dec 8 → 1996 Dec 11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{1e4c31df6e5c4c38966a3bd0e77f4d78,

title = "Enhancement of electron emission efficiency and stability of molybdenum field emitter array by diamond-like carbon coating",

abstract = "We have studied the enhancement of electron emission by diamond-like carbon (DLC) coating on Mo field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The turn-on voltage was lowered from 55V to 30V by 20 nm DLC coating and maximum emission current was increased from 166μA to 831μA. Also the gate voltage required to get the anode current of 0.1(μA/emitter) decreases from 77V to 48V. Furthermore, the emission current from DLC coated Mo FEAs is more stable than that of non-coated Mo FEAs.",

author = "Jung, {J. H.} and Ju, {B. K.} and Lee, {Y. H.} and Oh, {M. H.} and J. Jang",

year = "1996",

language = "English",

pages = "293--296",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 IEEE International Electron Devices Meeting ; Conference date: 08-12-1996 Through 11-12-1996",

}

TY - JOUR

T1 - Enhancement of electron emission efficiency and stability of molybdenum field emitter array by diamond-like carbon coating

AU - Jung, J. H.

AU - Ju, B. K.

AU - Lee, Y. H.

AU - Oh, M. H.

AU - Jang, J.

PY - 1996

Y1 - 1996

N2 - We have studied the enhancement of electron emission by diamond-like carbon (DLC) coating on Mo field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The turn-on voltage was lowered from 55V to 30V by 20 nm DLC coating and maximum emission current was increased from 166μA to 831μA. Also the gate voltage required to get the anode current of 0.1(μA/emitter) decreases from 77V to 48V. Furthermore, the emission current from DLC coated Mo FEAs is more stable than that of non-coated Mo FEAs.

AB - We have studied the enhancement of electron emission by diamond-like carbon (DLC) coating on Mo field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The turn-on voltage was lowered from 55V to 30V by 20 nm DLC coating and maximum emission current was increased from 166μA to 831μA. Also the gate voltage required to get the anode current of 0.1(μA/emitter) decreases from 77V to 48V. Furthermore, the emission current from DLC coated Mo FEAs is more stable than that of non-coated Mo FEAs.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030384443&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030384443

SP - 293

EP - 296

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting

Y2 - 8 December 1996 through 11 December 1996

ER -