Enhancement of emission characteristics for field-emitter arrays by optimizing the etched feature of the gate electrode

Hoon Kim, Sang Won Seo, Joo Won Lee, Jong Won Park, Yun-Hi Lee, Jin Jang, Byeong Kwon Ju

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The crystallographic orientations of sputtered Cr films as a function of substrate temperature T s were characterized by SEM, XRD, and estimation of etched features. It was found that the tapering angle θ t of thin Cr films after reactive ion etching depends on the deposition conditions. In the case of nontapered-gated FEAs, emission properties were enhanced.

Original languageEnglish
Pages (from-to)186-192
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number1 SPEC.
DOIs
Publication statusPublished - 2003 Jan 1

Fingerprint

Reactive ion etching
tapering
emitters
etching
Finite element method
Thin films
Scanning electron microscopy
Electrodes
scanning electron microscopy
electrodes
augmentation
Substrates
thin films
ions
Temperature
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Enhancement of emission characteristics for field-emitter arrays by optimizing the etched feature of the gate electrode. / Kim, Hoon; Seo, Sang Won; Lee, Joo Won; Park, Jong Won; Lee, Yun-Hi; Jang, Jin; Ju, Byeong Kwon.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 1 SPEC., 01.01.2003, p. 186-192.

Research output: Contribution to journalArticle

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