Enhancement of fluorescence by Ce3+ doping in green-emitting Ca15(PO4)2(SiO4)6: Eu 2+ phosphor for UV-based w-LEDs

Seyoon Hur, Hee Jo Song, Hee Suk Roh, Dong-Wan Kim, Kug Sun Hong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Ca15(PO4)2(SiO4) 6:Eu2+,Ce3+ phosphor was synthesized by a solid-state reaction. Doping of Ce3+ into the Ca2+ site of the Ca15(PO4)2(SiO4) 6:Eu2+ phosphor enhanced the Eu2+ emission greatly, as observed by measuring the photoluminescence properties and the quantum efficiency levels. The mechanism of the enhancement of the Eu 2+ emission by Ce3+ doping was investigated by comparing the normalized photoluminescence (PL) spectra with the normalized photoluminescence excitation (PLE) spectra and analyzing the absorbance and the fluorescence lifetime of the Ca15(PO4) 2(SiO4)6:Eu2+,Ce3+ phosphors. Furthermore, the thermoluminescence properties were measured to confirm the thermal stability of the synthesized phosphor when exposed to the high junction temperature of recent high-power LED chips, showing a thermal activation energy barrier of 0.213 eV.

Original languageEnglish
Pages (from-to)9791-9795
Number of pages5
JournalCeramics International
Volume39
Issue number8
DOIs
Publication statusPublished - 2013 Dec 1
Externally publishedYes

Fingerprint

Phosphors
Light emitting diodes
Fluorescence
Doping (additives)
Photoluminescence
Thermoluminescence
Energy barriers
Solid state reactions
Quantum efficiency
Thermodynamic stability
Activation energy
Temperature

Keywords

  • A. Powders: solid state reaction
  • C. Optical properties
  • D. Silicate
  • E. Functional applications

ASJC Scopus subject areas

  • Ceramics and Composites
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Enhancement of fluorescence by Ce3+ doping in green-emitting Ca15(PO4)2(SiO4)6 : Eu 2+ phosphor for UV-based w-LEDs. / Hur, Seyoon; Song, Hee Jo; Roh, Hee Suk; Kim, Dong-Wan; Hong, Kug Sun.

In: Ceramics International, Vol. 39, No. 8, 01.12.2013, p. 9791-9795.

Research output: Contribution to journalArticle

Hur, Seyoon ; Song, Hee Jo ; Roh, Hee Suk ; Kim, Dong-Wan ; Hong, Kug Sun. / Enhancement of fluorescence by Ce3+ doping in green-emitting Ca15(PO4)2(SiO4)6 : Eu 2+ phosphor for UV-based w-LEDs. In: Ceramics International. 2013 ; Vol. 39, No. 8. pp. 9791-9795.
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abstract = "Ca15(PO4)2(SiO4) 6:Eu2+,Ce3+ phosphor was synthesized by a solid-state reaction. Doping of Ce3+ into the Ca2+ site of the Ca15(PO4)2(SiO4) 6:Eu2+ phosphor enhanced the Eu2+ emission greatly, as observed by measuring the photoluminescence properties and the quantum efficiency levels. The mechanism of the enhancement of the Eu 2+ emission by Ce3+ doping was investigated by comparing the normalized photoluminescence (PL) spectra with the normalized photoluminescence excitation (PLE) spectra and analyzing the absorbance and the fluorescence lifetime of the Ca15(PO4) 2(SiO4)6:Eu2+,Ce3+ phosphors. Furthermore, the thermoluminescence properties were measured to confirm the thermal stability of the synthesized phosphor when exposed to the high junction temperature of recent high-power LED chips, showing a thermal activation energy barrier of 0.213 eV.",
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AU - Kim, Dong-Wan

AU - Hong, Kug Sun

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AB - Ca15(PO4)2(SiO4) 6:Eu2+,Ce3+ phosphor was synthesized by a solid-state reaction. Doping of Ce3+ into the Ca2+ site of the Ca15(PO4)2(SiO4) 6:Eu2+ phosphor enhanced the Eu2+ emission greatly, as observed by measuring the photoluminescence properties and the quantum efficiency levels. The mechanism of the enhancement of the Eu 2+ emission by Ce3+ doping was investigated by comparing the normalized photoluminescence (PL) spectra with the normalized photoluminescence excitation (PLE) spectra and analyzing the absorbance and the fluorescence lifetime of the Ca15(PO4) 2(SiO4)6:Eu2+,Ce3+ phosphors. Furthermore, the thermoluminescence properties were measured to confirm the thermal stability of the synthesized phosphor when exposed to the high junction temperature of recent high-power LED chips, showing a thermal activation energy barrier of 0.213 eV.

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