Abstract
We developed the direct patterning process of the ZrO2 high-aspect-ratio (HAR) pattern for light-extraction efficiency of GaN-based blue light-emitting diodes (LEDs). ZrO2 HAR pattern, which has relatively high refractive index and acts as scattering layer, was formed on GaN-based blue LEDs using ultraviolet-nanoimprint lithography (UV-NIL) with mixture of ZrO2 nanoparticle and monomer. The photons generated from the multi-quantum well layer can escape the ITO (Indium Tin Oxide) layer more easily due to gradual refractive index and optical path that increased via waveguide mode. The ZrO2 patterned LED with high pattern density showed the high brightness in same input current. The patterned LED with pitch of 1μm showed the 25.7% higher light output power than a un-patterned LED at a driving current of 20mA.
| Original language | English |
|---|---|
| Journal | Ceramics International |
| DOIs | |
| Publication status | Accepted/In press - 2017 |
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Keywords
- Films
- Functional applications
- Optical properties
- ZrO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry
Cite this
Enhancement of light extraction efficiency for GaN-based light emitting diodes using ZrO2 high-aspect-ratio pattern as scattering layer. / Choo, Soyoung; Choi, Jinyoung; Choi, Hak Jong; Huh, Daihong; Son, Soomin; Kim, Yang Doo; Lee, Heon.
In: Ceramics International, 2017.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Enhancement of light extraction efficiency for GaN-based light emitting diodes using ZrO2 high-aspect-ratio pattern as scattering layer
AU - Choo, Soyoung
AU - Choi, Jinyoung
AU - Choi, Hak Jong
AU - Huh, Daihong
AU - Son, Soomin
AU - Kim, Yang Doo
AU - Lee, Heon
PY - 2017
Y1 - 2017
N2 - We developed the direct patterning process of the ZrO2 high-aspect-ratio (HAR) pattern for light-extraction efficiency of GaN-based blue light-emitting diodes (LEDs). ZrO2 HAR pattern, which has relatively high refractive index and acts as scattering layer, was formed on GaN-based blue LEDs using ultraviolet-nanoimprint lithography (UV-NIL) with mixture of ZrO2 nanoparticle and monomer. The photons generated from the multi-quantum well layer can escape the ITO (Indium Tin Oxide) layer more easily due to gradual refractive index and optical path that increased via waveguide mode. The ZrO2 patterned LED with high pattern density showed the high brightness in same input current. The patterned LED with pitch of 1μm showed the 25.7% higher light output power than a un-patterned LED at a driving current of 20mA.
AB - We developed the direct patterning process of the ZrO2 high-aspect-ratio (HAR) pattern for light-extraction efficiency of GaN-based blue light-emitting diodes (LEDs). ZrO2 HAR pattern, which has relatively high refractive index and acts as scattering layer, was formed on GaN-based blue LEDs using ultraviolet-nanoimprint lithography (UV-NIL) with mixture of ZrO2 nanoparticle and monomer. The photons generated from the multi-quantum well layer can escape the ITO (Indium Tin Oxide) layer more easily due to gradual refractive index and optical path that increased via waveguide mode. The ZrO2 patterned LED with high pattern density showed the high brightness in same input current. The patterned LED with pitch of 1μm showed the 25.7% higher light output power than a un-patterned LED at a driving current of 20mA.
KW - Films
KW - Functional applications
KW - Optical properties
KW - ZrO
UR - http://www.scopus.com/inward/record.url?scp=85020407059&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85020407059&partnerID=8YFLogxK
U2 - 10.1016/j.ceramint.2017.05.209
DO - 10.1016/j.ceramint.2017.05.209
M3 - Article
AN - SCOPUS:85020407059
JO - Ceramics International
JF - Ceramics International
SN - 0272-8842
ER -