Enhancement of light extraction efficiency for GaN-based light emitting diodes using ZrO2 high-aspect-ratio pattern as scattering layer

Soyoung Choo, Jinyoung Choi, Hak Jong Choi, Daihong Huh, Soomin Son, Yang Doo Kim, Heon Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We developed the direct patterning process of the ZrO2 high-aspect-ratio (HAR) pattern for light-extraction efficiency of GaN-based blue light-emitting diodes (LEDs). ZrO2 HAR pattern, which has relatively high refractive index and acts as scattering layer, was formed on GaN-based blue LEDs using ultraviolet-nanoimprint lithography (UV-NIL) with mixture of ZrO2 nanoparticle and monomer. The photons generated from the multi-quantum well layer can escape the ITO (Indium Tin Oxide) layer more easily due to gradual refractive index and optical path that increased via waveguide mode. The ZrO2 patterned LED with high pattern density showed the high brightness in same input current. The patterned LED with pitch of 1μm showed the 25.7% higher light output power than a un-patterned LED at a driving current of 20mA.

Original languageEnglish
JournalCeramics International
DOIs
Publication statusAccepted/In press - 2017

Fingerprint

Light emitting diodes
Aspect ratio
Scattering
Refractive index
Nanoimprint lithography
Tin oxides
Indium
Semiconductor quantum wells
Luminance
Waveguides
Photons
Monomers
Nanoparticles

Keywords

  • Films
  • Functional applications
  • Optical properties
  • ZrO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Enhancement of light extraction efficiency for GaN-based light emitting diodes using ZrO2 high-aspect-ratio pattern as scattering layer. / Choo, Soyoung; Choi, Jinyoung; Choi, Hak Jong; Huh, Daihong; Son, Soomin; Kim, Yang Doo; Lee, Heon.

In: Ceramics International, 2017.

Research output: Contribution to journalArticle

@article{f746a0ba250c4c59b7c8640f9ce4218a,
title = "Enhancement of light extraction efficiency for GaN-based light emitting diodes using ZrO2 high-aspect-ratio pattern as scattering layer",
abstract = "We developed the direct patterning process of the ZrO2 high-aspect-ratio (HAR) pattern for light-extraction efficiency of GaN-based blue light-emitting diodes (LEDs). ZrO2 HAR pattern, which has relatively high refractive index and acts as scattering layer, was formed on GaN-based blue LEDs using ultraviolet-nanoimprint lithography (UV-NIL) with mixture of ZrO2 nanoparticle and monomer. The photons generated from the multi-quantum well layer can escape the ITO (Indium Tin Oxide) layer more easily due to gradual refractive index and optical path that increased via waveguide mode. The ZrO2 patterned LED with high pattern density showed the high brightness in same input current. The patterned LED with pitch of 1μm showed the 25.7{\%} higher light output power than a un-patterned LED at a driving current of 20mA.",
keywords = "Films, Functional applications, Optical properties, ZrO",
author = "Soyoung Choo and Jinyoung Choi and Choi, {Hak Jong} and Daihong Huh and Soomin Son and Kim, {Yang Doo} and Heon Lee",
year = "2017",
doi = "10.1016/j.ceramint.2017.05.209",
language = "English",
journal = "Ceramics International",
issn = "0272-8842",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Enhancement of light extraction efficiency for GaN-based light emitting diodes using ZrO2 high-aspect-ratio pattern as scattering layer

AU - Choo, Soyoung

AU - Choi, Jinyoung

AU - Choi, Hak Jong

AU - Huh, Daihong

AU - Son, Soomin

AU - Kim, Yang Doo

AU - Lee, Heon

PY - 2017

Y1 - 2017

N2 - We developed the direct patterning process of the ZrO2 high-aspect-ratio (HAR) pattern for light-extraction efficiency of GaN-based blue light-emitting diodes (LEDs). ZrO2 HAR pattern, which has relatively high refractive index and acts as scattering layer, was formed on GaN-based blue LEDs using ultraviolet-nanoimprint lithography (UV-NIL) with mixture of ZrO2 nanoparticle and monomer. The photons generated from the multi-quantum well layer can escape the ITO (Indium Tin Oxide) layer more easily due to gradual refractive index and optical path that increased via waveguide mode. The ZrO2 patterned LED with high pattern density showed the high brightness in same input current. The patterned LED with pitch of 1μm showed the 25.7% higher light output power than a un-patterned LED at a driving current of 20mA.

AB - We developed the direct patterning process of the ZrO2 high-aspect-ratio (HAR) pattern for light-extraction efficiency of GaN-based blue light-emitting diodes (LEDs). ZrO2 HAR pattern, which has relatively high refractive index and acts as scattering layer, was formed on GaN-based blue LEDs using ultraviolet-nanoimprint lithography (UV-NIL) with mixture of ZrO2 nanoparticle and monomer. The photons generated from the multi-quantum well layer can escape the ITO (Indium Tin Oxide) layer more easily due to gradual refractive index and optical path that increased via waveguide mode. The ZrO2 patterned LED with high pattern density showed the high brightness in same input current. The patterned LED with pitch of 1μm showed the 25.7% higher light output power than a un-patterned LED at a driving current of 20mA.

KW - Films

KW - Functional applications

KW - Optical properties

KW - ZrO

UR - http://www.scopus.com/inward/record.url?scp=85020407059&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85020407059&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2017.05.209

DO - 10.1016/j.ceramint.2017.05.209

M3 - Article

AN - SCOPUS:85020407059

JO - Ceramics International

JF - Ceramics International

SN - 0272-8842

ER -