Enhancement of light extraction efficiency of OLEDS using Si 3N4-based optical scattering layer

Sang Jun Park, Yang Doo Kim, Ho Won Lee, Hyung Jin Yang, Joong Yeon Cho, Young Kwan Kim, Heon Lee

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

An optical scattering layer, consisting of a Si3N4 nano-pillar array and a spin-coated hydrogen silsesquioxane (HSQ) planarization layer, was introduced to an organic light-emitting diode (OLED) substrate to increase the out-coupling efficiency. After plasma enhanced chemical vapor deposition (PECVD) of the Si3N4 layer, the nano-pillar array was created using nanoimprint lithography and reactive ion etching. As the Si3N4 pillar array has a refractive index of 2.0, photons generated in the organic layer are scattered by the Si3N4 structures and thus have a higher chance of being emitted from the device. The spincoated HSQ planarization layer produces a flat substrate, which is essential for depositing a uniform organic material layer and assuring the electric conductivity of the transparent conducting oxide (TCO) layer. In this study, Si3N4 nano-structures with a height of 100 or 300 nm were used to enhance the out-coupling efficiency of the OLED devices. Although the electrical conductivity of the TCO layer deposited on the light scattering layer was slightly degraded, the OLED devices formed with the light scattering layer exhibited a higher luminous power at given electrical power. Consequently, the use of a planarized 300-nm-thick Si3N4 layer increased the external quantum efficiency of the OLED device by 50% at 10,000 cd/m2 compared to the reference OLED device fabricated on a flat glass substrate.

Original languageEnglish
Pages (from-to)12392-12397
Number of pages6
JournalOptics Express
Volume22
Issue number10
DOIs
Publication statusPublished - 2014 Jan 1

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augmentation
scattering
light emitting diodes
light scattering
conduction
oxides
hydrogen
organic materials
quantum efficiency
lithography
etching
vapor deposition
refractivity
conductivity
electrical resistivity
glass
photons
ions

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Park, S. J., Kim, Y. D., Lee, H. W., Yang, H. J., Cho, J. Y., Kim, Y. K., & Lee, H. (2014). Enhancement of light extraction efficiency of OLEDS using Si 3N4-based optical scattering layer. Optics Express, 22(10), 12392-12397. https://doi.org/10.1364/OE.22.012392

Enhancement of light extraction efficiency of OLEDS using Si 3N4-based optical scattering layer. / Park, Sang Jun; Kim, Yang Doo; Lee, Ho Won; Yang, Hyung Jin; Cho, Joong Yeon; Kim, Young Kwan; Lee, Heon.

In: Optics Express, Vol. 22, No. 10, 01.01.2014, p. 12392-12397.

Research output: Contribution to journalArticle

Park, Sang Jun ; Kim, Yang Doo ; Lee, Ho Won ; Yang, Hyung Jin ; Cho, Joong Yeon ; Kim, Young Kwan ; Lee, Heon. / Enhancement of light extraction efficiency of OLEDS using Si 3N4-based optical scattering layer. In: Optics Express. 2014 ; Vol. 22, No. 10. pp. 12392-12397.
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