Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays

B. J. Kim, H. Jung, J. Shin, M. A. Mastro, C. R. Eddy, J. K. Hite, S. H. Kim, J. Bang, J. Kim

Research output: Contribution to journalLetter

23 Citations (Scopus)


Here we introduce a simple and robust method to improve the light extraction efficiency of ultraviolet light emitting diodes (UV LEDs). Although many previous efforts have focused on etching the GaN surfaces, we employed a simple solution process to texture the GaN surface. Arrays of SiO2 nanosphere monolayers were spun cast onto a polymer layer, consisting of benzocyclobutene (BCB) resins; subsequently, the bottom half of the SiO2 nanospheres sunk into the BCB layer. The resulting array formed in a hexagonal-like pattern of 'nano-lenses' and the photoluminescence measurement exhibited that these patterns enhanced the light extracting efficiency of UV LEDs by 23%.

Original languageEnglish
Pages (from-to)2742-2744
Number of pages3
JournalThin Solid Films
Issue number8
Publication statusPublished - 2009 Feb 27



  • Light emitting diode
  • Light extraction efficiency
  • Nanosphere arrays

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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