Enhancement of light extraction efficiency via inductively coupled plasma etching of block copolymer templates on GaN/Al2o3

Hong Yeol Kim; Taejoon Kim; Jae Hui Ahn; Kyusoon Shin; Joona Bang; Jihyun Kim

Enhancement of light extraction efficiency via inductively coupled plasma etching of block copolymer templates on GaN/Al₂o₃

Hong Yeol Kim, Taejoon Kim, Jae Hui Ahn, Kyusoon Shin, Joona Bang, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report that nanostructured patterns can be achieved on GaN/Al₂O₃ by a nanofabrication method that employs the inductively coupled plasma (ICP) etching of block copolymer templates. We first prepared the nanoporous patterns of a poly(ethylene oxide-b-methyl methacrylate-b-styrene) (PEO-b-PMMA-b-PS) triblock copolymer thin film on GaN/c-Al₂O₃ substrates. Then, the nanostructures from PEO-b-PMMA-b-PS triblock copolymers were successfully transferred to GaN layers using ICP etching. Room temperature photoluminescence (PL) confirmed that the PL intensity was increased by about 30% around 450 nm wavelength after the pattern transfer onto GaN/c-Al₂O₃ substrates.

Original language	English
Pages (from-to)	185-188
Number of pages	4
Journal	Electronic Materials Letters
Volume	4
Issue number	4
Publication status	Published - 2008

Keywords

Block copolymer thin films
GaN
Plasma etching
Self-assembly

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "Enhancement of light extraction efficiency via inductively coupled plasma etching of block copolymer templates on GaN/Al2o3",

abstract = "We report that nanostructured patterns can be achieved on GaN/Al2O3 by a nanofabrication method that employs the inductively coupled plasma (ICP) etching of block copolymer templates. We first prepared the nanoporous patterns of a poly(ethylene oxide-b-methyl methacrylate-b-styrene) (PEO-b-PMMA-b-PS) triblock copolymer thin film on GaN/c-Al2O3 substrates. Then, the nanostructures from PEO-b-PMMA-b-PS triblock copolymers were successfully transferred to GaN layers using ICP etching. Room temperature photoluminescence (PL) confirmed that the PL intensity was increased by about 30% around 450 nm wavelength after the pattern transfer onto GaN/c-Al2O3 substrates.",

keywords = "Block copolymer thin films, GaN, Plasma etching, Self-assembly",

author = "Kim, {Hong Yeol} and Taejoon Kim and Ahn, {Jae Hui} and Kyusoon Shin and Joona Bang and Jihyun Kim",

year = "2008",

language = "English",

volume = "4",

pages = "185--188",

journal = "Electronic Materials Letters",

issn = "1738-8090",

publisher = "Springer Netherlands",

number = "4",

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TY - JOUR

T1 - Enhancement of light extraction efficiency via inductively coupled plasma etching of block copolymer templates on GaN/Al2o3

AU - Kim, Hong Yeol

AU - Kim, Taejoon

AU - Ahn, Jae Hui

AU - Shin, Kyusoon

AU - Bang, Joona

AU - Kim, Jihyun

PY - 2008

Y1 - 2008

N2 - We report that nanostructured patterns can be achieved on GaN/Al2O3 by a nanofabrication method that employs the inductively coupled plasma (ICP) etching of block copolymer templates. We first prepared the nanoporous patterns of a poly(ethylene oxide-b-methyl methacrylate-b-styrene) (PEO-b-PMMA-b-PS) triblock copolymer thin film on GaN/c-Al2O3 substrates. Then, the nanostructures from PEO-b-PMMA-b-PS triblock copolymers were successfully transferred to GaN layers using ICP etching. Room temperature photoluminescence (PL) confirmed that the PL intensity was increased by about 30% around 450 nm wavelength after the pattern transfer onto GaN/c-Al2O3 substrates.

AB - We report that nanostructured patterns can be achieved on GaN/Al2O3 by a nanofabrication method that employs the inductively coupled plasma (ICP) etching of block copolymer templates. We first prepared the nanoporous patterns of a poly(ethylene oxide-b-methyl methacrylate-b-styrene) (PEO-b-PMMA-b-PS) triblock copolymer thin film on GaN/c-Al2O3 substrates. Then, the nanostructures from PEO-b-PMMA-b-PS triblock copolymers were successfully transferred to GaN layers using ICP etching. Room temperature photoluminescence (PL) confirmed that the PL intensity was increased by about 30% around 450 nm wavelength after the pattern transfer onto GaN/c-Al2O3 substrates.

KW - Block copolymer thin films

KW - GaN

KW - Plasma etching

KW - Self-assembly

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M3 - Article

AN - SCOPUS:70349410553

SN - 1738-8090

VL - 4

SP - 185

EP - 188

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 4

ER -

Enhancement of light extraction efficiency via inductively coupled plasma etching of block copolymer templates on GaN/Al₂o₃

Abstract

Keywords

ASJC Scopus subject areas

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