Enhancement of light extraction efficiency via inductively coupled plasma etching of block copolymer templates on GaN/Al2o3

Hong Yeol Kim, Taejoon Kim, Jae Hui Ahn, Kyusoon Shin, Joona Bang, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We report that nanostructured patterns can be achieved on GaN/Al2O3 by a nanofabrication method that employs the inductively coupled plasma (ICP) etching of block copolymer templates. We first prepared the nanoporous patterns of a poly(ethylene oxide-b-methyl methacrylate-b-styrene) (PEO-b-PMMA-b-PS) triblock copolymer thin film on GaN/c-Al2O3 substrates. Then, the nanostructures from PEO-b-PMMA-b-PS triblock copolymers were successfully transferred to GaN layers using ICP etching. Room temperature photoluminescence (PL) confirmed that the PL intensity was increased by about 30% around 450 nm wavelength after the pattern transfer onto GaN/c-Al2O3 substrates.

Original languageEnglish
Pages (from-to)185-188
Number of pages4
JournalElectronic Materials Letters
Volume4
Issue number4
Publication statusPublished - 2008

Keywords

  • Block copolymer thin films
  • GaN
  • Plasma etching
  • Self-assembly

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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