Enhancement of light extraction in GaN based LED structures using TiO2 nano-structures

Kyung Min Yoon, Ki Yeon Yang, Kyeong Jae Byeon, Heon Lee

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


TiO2 nano-patterns were formed on the indium-tin-oxide (ITO) layer of GaN based light emitting diodes (LEDs) without a residual layer using a sol-imprinting process. A polydimethylsiloxane mold replicated from a Si master was used as the imprint stamp for the sol-imprinting process. The light extraction efficiency of LEDs was enhanced by the TiO2 nano-patterns formed on the ITO layer because the TiO2 nano-patterns locally modulated the refractive index of the ITO layer and enhanced the scattering of light at the ITO layer. Consequently, directly fabricated TiO2 nano-patterns on the ITO layer can esoln hance the light extraction efficiency of LEDs without plasma-induced damage.

Original languageEnglish
Pages (from-to)484-487
Number of pages4
JournalSolid-State Electronics
Issue number4
Publication statusPublished - 2010 Apr


  • Light emitting diode (LED)
  • Nano-pattern
  • Photoluminescence
  • Photon extraction efficiency
  • Sol-imprint
  • TiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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