Abstract
The light output and electrical characteristics of GaN-based vertical light emitting diodes were investigated as a function of n-GaN thickness. The forward voltage increases from 3.34 to 3.42 V at an injection current of 350 mA as the n-GaN thickness decreases from 5.0 to 2.0 μm. Even at a high injection current of 2.0 A, LEDs with 2.0 μm-thick n-GaN reveal stable forward characteristics which are comparable to those of LEDs with 5.0 μm-thick n-GaN. All the samples exhibit almost the same reverse current up to approximately -8 V. The output power increases with decreasing n-GaN layer thickness. For example, LEDs with 2.0 μm-thick n-GaN yield about 12% higher light output power as compared to LEDs with 5.0 μm-thick n-GaN. Their light output power continuously increases without saturation as the injection current increases up to 1 A. The n-GaN thickness dependence of the electrical characteristics is described and discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 3164-3167 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 88 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2011 Oct 1 |
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Keywords
- GaN
- Light output
- Vertical light emitting diode
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
Enhancement of light output power of GaN-based vertical light emitting diodes by optimizing n-GaN thickness. / Jeong, Hwan Hee; Lee, Sang Youl; Choi, Kwang Ki; Song, June O.; Lee, Jung Hee; Seong, Tae Yeon.
In: Microelectronic Engineering, Vol. 88, No. 10, 01.10.2011, p. 3164-3167.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Enhancement of light output power of GaN-based vertical light emitting diodes by optimizing n-GaN thickness
AU - Jeong, Hwan Hee
AU - Lee, Sang Youl
AU - Choi, Kwang Ki
AU - Song, June O.
AU - Lee, Jung Hee
AU - Seong, Tae Yeon
PY - 2011/10/1
Y1 - 2011/10/1
N2 - The light output and electrical characteristics of GaN-based vertical light emitting diodes were investigated as a function of n-GaN thickness. The forward voltage increases from 3.34 to 3.42 V at an injection current of 350 mA as the n-GaN thickness decreases from 5.0 to 2.0 μm. Even at a high injection current of 2.0 A, LEDs with 2.0 μm-thick n-GaN reveal stable forward characteristics which are comparable to those of LEDs with 5.0 μm-thick n-GaN. All the samples exhibit almost the same reverse current up to approximately -8 V. The output power increases with decreasing n-GaN layer thickness. For example, LEDs with 2.0 μm-thick n-GaN yield about 12% higher light output power as compared to LEDs with 5.0 μm-thick n-GaN. Their light output power continuously increases without saturation as the injection current increases up to 1 A. The n-GaN thickness dependence of the electrical characteristics is described and discussed.
AB - The light output and electrical characteristics of GaN-based vertical light emitting diodes were investigated as a function of n-GaN thickness. The forward voltage increases from 3.34 to 3.42 V at an injection current of 350 mA as the n-GaN thickness decreases from 5.0 to 2.0 μm. Even at a high injection current of 2.0 A, LEDs with 2.0 μm-thick n-GaN reveal stable forward characteristics which are comparable to those of LEDs with 5.0 μm-thick n-GaN. All the samples exhibit almost the same reverse current up to approximately -8 V. The output power increases with decreasing n-GaN layer thickness. For example, LEDs with 2.0 μm-thick n-GaN yield about 12% higher light output power as compared to LEDs with 5.0 μm-thick n-GaN. Their light output power continuously increases without saturation as the injection current increases up to 1 A. The n-GaN thickness dependence of the electrical characteristics is described and discussed.
KW - GaN
KW - Light output
KW - Vertical light emitting diode
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UR - http://www.scopus.com/inward/citedby.url?scp=80052814647&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2011.06.020
DO - 10.1016/j.mee.2011.06.020
M3 - Article
AN - SCOPUS:80052814647
VL - 88
SP - 3164
EP - 3167
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 10
ER -