Abstract
The light output and electrical characteristics of GaN-based vertical light emitting diodes were investigated as a function of n-GaN thickness. The forward voltage increases from 3.34 to 3.42 V at an injection current of 350 mA as the n-GaN thickness decreases from 5.0 to 2.0 μm. Even at a high injection current of 2.0 A, LEDs with 2.0 μm-thick n-GaN reveal stable forward characteristics which are comparable to those of LEDs with 5.0 μm-thick n-GaN. All the samples exhibit almost the same reverse current up to approximately -8 V. The output power increases with decreasing n-GaN layer thickness. For example, LEDs with 2.0 μm-thick n-GaN yield about 12% higher light output power as compared to LEDs with 5.0 μm-thick n-GaN. Their light output power continuously increases without saturation as the injection current increases up to 1 A. The n-GaN thickness dependence of the electrical characteristics is described and discussed.
Original language | English |
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Pages (from-to) | 3164-3167 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 88 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2011 Oct |
Keywords
- GaN
- Light output
- Vertical light emitting diode
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering