Enhancement of on-resistance characteristics using charge balance analysis modulation in a trench filling super junction MOSFET

Jongmin Geum, Eun Sik Jung, Yong Tae Kim, Ey Goo Kang, Man Young Sung

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.

Original languageEnglish
Pages (from-to)843-847
Number of pages5
JournalJournal of Electrical Engineering and Technology
Volume9
Issue number3
DOIs
Publication statusPublished - 2014 May

Keywords

  • Charge balance
  • Super junction MOSFET
  • Trench angle
  • Trench filling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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