Abstract
In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.
| Original language | English |
|---|---|
| Pages (from-to) | 843-847 |
| Number of pages | 5 |
| Journal | Journal of Electrical Engineering and Technology |
| Volume | 9 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
Fingerprint
Keywords
- Charge balance
- Super junction MOSFET
- Trench angle
- Trench filling
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Enhancement of on-resistance characteristics using charge balance analysis modulation in a trench filling super junction MOSFET. / Geum, Jongmin; Jung, Eun Sik; Kim, Yong Tae; Kang, Ey Goo; Sung, Man Young.
In: Journal of Electrical Engineering and Technology, Vol. 9, No. 3, 01.01.2014, p. 843-847.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Enhancement of on-resistance characteristics using charge balance analysis modulation in a trench filling super junction MOSFET
AU - Geum, Jongmin
AU - Jung, Eun Sik
AU - Kim, Yong Tae
AU - Kang, Ey Goo
AU - Sung, Man Young
PY - 2014/1/1
Y1 - 2014/1/1
N2 - In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.
AB - In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.
KW - Charge balance
KW - Super junction MOSFET
KW - Trench angle
KW - Trench filling
UR - http://www.scopus.com/inward/record.url?scp=84899942479&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84899942479&partnerID=8YFLogxK
U2 - 10.5370/JEET.2014.9.3.843
DO - 10.5370/JEET.2014.9.3.843
M3 - Article
AN - SCOPUS:84899942479
VL - 9
SP - 843
EP - 847
JO - Journal of Electrical Engineering and Technology
JF - Journal of Electrical Engineering and Technology
SN - 1975-0102
IS - 3
ER -