Enhancement of on-resistance characteristics using charge balance analysis modulation in a trench filling super junction MOSFET

Jongmin Geum, Eun Sik Jung, Yong Tae Kim, Ey Goo Kang, Man Young Sung

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.

Original languageEnglish
Pages (from-to)843-847
Number of pages5
JournalJournal of Electrical Engineering and Technology
Volume9
Issue number3
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Electric breakdown
Modulation
Analytical models
Doping (additives)
Fabrication

Keywords

  • Charge balance
  • Super junction MOSFET
  • Trench angle
  • Trench filling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Enhancement of on-resistance characteristics using charge balance analysis modulation in a trench filling super junction MOSFET. / Geum, Jongmin; Jung, Eun Sik; Kim, Yong Tae; Kang, Ey Goo; Sung, Man Young.

In: Journal of Electrical Engineering and Technology, Vol. 9, No. 3, 01.01.2014, p. 843-847.

Research output: Contribution to journalArticle

@article{8a715ab454d2493ca9a35d7e5199315b,
title = "Enhancement of on-resistance characteristics using charge balance analysis modulation in a trench filling super junction MOSFET",
abstract = "In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.",
keywords = "Charge balance, Super junction MOSFET, Trench angle, Trench filling",
author = "Jongmin Geum and Jung, {Eun Sik} and Kim, {Yong Tae} and Kang, {Ey Goo} and Sung, {Man Young}",
year = "2014",
month = "1",
day = "1",
doi = "10.5370/JEET.2014.9.3.843",
language = "English",
volume = "9",
pages = "843--847",
journal = "Journal of Electrical Engineering and Technology",
issn = "1975-0102",
publisher = "Korean Institute of Electrical Engineers",
number = "3",

}

TY - JOUR

T1 - Enhancement of on-resistance characteristics using charge balance analysis modulation in a trench filling super junction MOSFET

AU - Geum, Jongmin

AU - Jung, Eun Sik

AU - Kim, Yong Tae

AU - Kang, Ey Goo

AU - Sung, Man Young

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.

AB - In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.

KW - Charge balance

KW - Super junction MOSFET

KW - Trench angle

KW - Trench filling

UR - http://www.scopus.com/inward/record.url?scp=84899942479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899942479&partnerID=8YFLogxK

U2 - 10.5370/JEET.2014.9.3.843

DO - 10.5370/JEET.2014.9.3.843

M3 - Article

AN - SCOPUS:84899942479

VL - 9

SP - 843

EP - 847

JO - Journal of Electrical Engineering and Technology

JF - Journal of Electrical Engineering and Technology

SN - 1975-0102

IS - 3

ER -