@article{727142e413174753b58ab7ed1f7fc31d,
title = "Enhancement of perpendicular magnetic anisotropy and Dzyaloshinskii–Moriya interaction in thin ferromagnetic films by atomic-scale modulation of interfaces",
abstract = "To stabilize nontrivial spin textures, e.g., skyrmions or chiral domain walls in ultrathin magnetic films, an additional degree of freedom, such as the interfacial Dzyaloshinskii–Moriya interaction (IDMI), must be induced by the strong spin-orbit coupling (SOC) of a stacked heavy metal layer. However, advanced approaches to simultaneously control the IDMI and perpendicular magnetic anisotropy (PMA) are needed for future spin-orbitronic device implementations. Here, we show the effect of atomic-scale surface modulation on the magnetic properties and IDMI in ultrathin films composed of 5d heavy metal/ferromagnet/4d(5d) heavy metal or oxide interfaces, such as Pt/CoFeSiB/Ru, Pt/CoFeSiB/Ta, and Pt/CoFeSiB/MgO. The maximum IDMI value corresponds to the correlated roughness of the bottom and top interfaces of the ferromagnetic layer. The proposed approach for significant enhancement of PMA and the IDMI through interface roughness engineering at the atomic scale offers a powerful tool for the development of spin-orbitronic devices with precise and reliable controllability of their functionality.",
author = "Samardak, {A. S.} and Davydenko, {A. V.} and Kolesnikov, {A. G.} and Samardak, {A. Yu} and Kozlov, {A. G.} and Bappaditya Pal and Ognev, {A. V.} and Sadovnikov, {A. V.} and Nikitov, {S. A.} and Gerasimenko, {A. V.} and Cha, {In Ho} and Kim, {Yong Jin} and Kim, {Gyu Won} and Tretiakov, {Oleg A.} and Kim, {Young Keun}",
note = "Funding Information: This research was supported by the Future Materials Discovery Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (2015M3D1A1070465), by the Samsung Electronics University R&D program (Q1514435), by the Russian Foundation for Basic Research (19-02-00530), by the Russian Ministry of Science and Higher Education under the state task (0657-2020-0013), and by Act 211 of the Government of the Russian Federation (No. 02.A03.21.0011). O.A.T. acknowledges the support by the Australian Research Council (Grant No. DP200101027), the Cooperative Research Project Program at the Research Institute of Electrical Communication, Tohoku University, and by the Ministry of Science and Technology Higher Education of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS” (No. K2-2019-006), implemented by a governmental decree dated 16th of March 2013, N 211. A.V. S. and S.A.N. thank the Russian Foundation for Basic Research (18-29-27026 and 18-57-76001). Publisher Copyright: {\textcopyright} 2020, The Author(s).",
year = "2020",
month = dec,
day = "1",
doi = "10.1038/s41427-020-0232-9",
language = "English",
volume = "12",
journal = "NPG Asia Materials",
issn = "1884-4049",
publisher = "Nature Publishing Group",
number = "1",
}