Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots

Il Kyu Park, Min Ki Kwon, Sung Ho Baek, Young Woo Ok, Tae Yeon Seong, Seong Ju Park, Yoon Seok Kim, Yong Tae Moon, Dong Joon Kim

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Abstract

The enhancement of phase separation in the InGaN layer grown on a GaN layer with a rough surface was investigated for the formation of self-assembled In-rich quantum dots (QDs) in the InGaN layer. Transmission electron microscopy images showed that In-rich QDs with a size of 2-5 nm were formed even in an InGaN layer with a low indium content, and a layer thickness less than the critical thickness. The room-temperature photoluminescence (PL) spectrum of this layer showed emission peaks corresponding to In-rich QDs. The temperature-dependent PL spectra showed dominant peak shifts to the lower energy side, indicating that the self-assembled In-rich QDs are formed in the InGaN layer grown on a rough GaN surface and that the carriers are localized in In-rich QDs.

Original languageEnglish
Article number061906
JournalApplied Physics Letters
Volume87
Issue number6
DOIs
Publication statusPublished - 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Park, I. K., Kwon, M. K., Baek, S. H., Ok, Y. W., Seong, T. Y., Park, S. J., Kim, Y. S., Moon, Y. T., & Kim, D. J. (2005). Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots. Applied Physics Letters, 87(6), [061906]. https://doi.org/10.1063/1.2008365