Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots

Il Kyu Park, Min Ki Kwon, Sung Ho Baek, Young Woo Ok, Tae Yeon Seong, Seong Ju Park, Yoon Seok Kim, Yong Tae Moon, Dong Joon Kim

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

The enhancement of phase separation in the InGaN layer grown on a GaN layer with a rough surface was investigated for the formation of self-assembled In-rich quantum dots (QDs) in the InGaN layer. Transmission electron microscopy images showed that In-rich QDs with a size of 2-5 nm were formed even in an InGaN layer with a low indium content, and a layer thickness less than the critical thickness. The room-temperature photoluminescence (PL) spectrum of this layer showed emission peaks corresponding to In-rich QDs. The temperature-dependent PL spectra showed dominant peak shifts to the lower energy side, indicating that the self-assembled In-rich QDs are formed in the InGaN layer grown on a rough GaN surface and that the carriers are localized in In-rich QDs.

Original languageEnglish
Article number061906
JournalApplied Physics Letters
Volume87
Issue number6
DOIs
Publication statusPublished - 2005 Sep 5
Externally publishedYes

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quantum dots
augmentation
photoluminescence
indium
transmission electron microscopy
shift
room temperature
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Park, I. K., Kwon, M. K., Baek, S. H., Ok, Y. W., Seong, T. Y., Park, S. J., ... Kim, D. J. (2005). Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots. Applied Physics Letters, 87(6), [061906]. https://doi.org/10.1063/1.2008365

Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots. / Park, Il Kyu; Kwon, Min Ki; Baek, Sung Ho; Ok, Young Woo; Seong, Tae Yeon; Park, Seong Ju; Kim, Yoon Seok; Moon, Yong Tae; Kim, Dong Joon.

In: Applied Physics Letters, Vol. 87, No. 6, 061906, 05.09.2005.

Research output: Contribution to journalArticle

Park, IK, Kwon, MK, Baek, SH, Ok, YW, Seong, TY, Park, SJ, Kim, YS, Moon, YT & Kim, DJ 2005, 'Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots', Applied Physics Letters, vol. 87, no. 6, 061906. https://doi.org/10.1063/1.2008365
Park, Il Kyu ; Kwon, Min Ki ; Baek, Sung Ho ; Ok, Young Woo ; Seong, Tae Yeon ; Park, Seong Ju ; Kim, Yoon Seok ; Moon, Yong Tae ; Kim, Dong Joon. / Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots. In: Applied Physics Letters. 2005 ; Vol. 87, No. 6.
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